首頁 >WEP2007>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
DUALN-ChannelMOSFET | WIINSOKShenzhen Guan Hua Wei Ye Co., Ltd 微碩半導體微碩半導體（深圳）有限公司 | WIINSOK | ||
N-ChannelEnhancementModeFieldEffectTransistor | YANGJIEYangzhou yangjie electronic co., ltd 揚州揚杰電子揚州揚杰電子科技股份有限公司 | YANGJIE | ||
30VNPNMEDIUMPOWERLOWSATURATIONTRANSISTORINSOT223 DESCRIPTION PackagedintheSOT223outlinethisnewlowsaturation30VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES ?Extemelylowequivalenton-resistance;RSAT=28mat6.5A ?7amps | Zetex Zetex Semiconductors | Zetex | ||
30VNPNMEDIUMPOWERLOWSATURATIONTRANSISTORINSOT223 DESCRIPTION PackagedintheSOT223outlinethisnewlowsaturation30VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES ?Extemelylowequivalenton-resistance;RSAT=28mat6.5A | DIODESDiodes Incorporated 美臺半導體 | DIODES | ||
30VNPNMEDIUMPOWERLOWSATURATIONTRANSISTORINSOT223 DESCRIPTION PackagedintheSOT223outlinethisnewlowsaturation30VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES ?Extemelylowequivalenton-resistance;RSAT=28mat6.5A | DIODESDiodes Incorporated 美臺半導體 | DIODES | ||
30VNPNMEDIUMPOWERLOWSATURATIONTRANSISTOR | DIODESDiodes Incorporated 美臺半導體 | DIODES | ||
30VNPNMEDIUMPOWERLOWSATURATIONTRANSISTORINSOT223 DESCRIPTION PackagedintheSOT223outlinethisnewlowsaturation30VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES ?Extemelylowequivalenton-resistance;RSAT=28mat6.5A ?7amps | Zetex Zetex Semiconductors | Zetex | ||
30VNPNMEDIUMPOWERLOWSATURATIONTRANSISTORINSOT223 DESCRIPTION PackagedintheSOT223outlinethisnewlowsaturation30VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES ?Extemelylowequivalenton-resistance;RSAT=28mat6.5A | DIODESDiodes Incorporated 美臺半導體 | DIODES | ||
30VNPNMEDIUMPOWERLOWSATURATIONTRANSISTORINSOT223 DESCRIPTION PackagedintheSOT223outlinethisnewlowsaturation30VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES ?Extemelylowequivalenton-resistance;RSAT=28mat6.5A ?7amps | Zetex Zetex Semiconductors | Zetex | ||
30VNPNLOWSATURATIONMEDIUMPOWERTRANSISTORINSOT89 DESCRIPTION PackagedintheSOT89outlinethisnewlowsaturation30VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES ?Extemelylowequivalenton-resistance;RSAT=23mΩat6.5A ?6amps | DIODESDiodes Incorporated 美臺半導體 | DIODES |
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