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VT30L60C

Dual Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC TYPICALAPPLICATIONS ?Foruseinhighfrequencyc

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT30L60C

Dual Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT30L60C_V01

Dual Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT30L60C-E3

Low forward voltage drop, low power losses

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC TYPICALAPPLICATIONS Foruseinhighfrequencyc

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT30L60C-E3

Dual Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:? fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusei

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT30L60C-E3_V01

Dual Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:? fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusei

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT30L60C-E3-4W

Dual Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC TYPICALAPPLICATIONS ?Foruseinhighfrequencyc

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT30L60C-M3/4W

Dual Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT30L60C-E3/4W

包裝：散裝 封裝/外殼：TO-220-3 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DDIODE SCHOTTKY 60V 15A TO-220AB

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

VT30L60CHM3/4W

包裝：散裝 封裝/外殼：TO-220-3 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE ARRAY SCHOTTKY 60V TO220AB

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

VT30L60C-M3/4W

包裝：散裝 封裝/外殼：TO-220-3 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE SCHOTTKY 60V 15A TO-220AB

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

詳細(xì)參數(shù)

  • 型號：

    VT30L60C

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Dual Trench MOS Barrier Schottky Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價格
VISHAY
23+
TO-220
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
VISHAY
22+
TO-220
32350
原裝正品 假一罰十 公司現(xiàn)貨
 詢價
VISHAY
TO-220
396379
集團(tuán)化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
VISHAY
1809+
TO-220
3675
就找我吧!--邀您體驗愉快問購元件!
 詢價
VIS
23+
TO-220AB
10000
公司只做原裝正品
 詢價
Vishay Semiconductor Diodes Di
22+
TO220AB
9000
原廠渠道,現(xiàn)貨配單
 詢價
VISHAY/威世
23+
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
VIS
23+
TO-220AB
6000
原裝正品，支持實單
 詢價
VISHAY/威世
22+
100000
代理渠道/只做原裝/可含稅
 詢價
VIS
22+
TO-220AB
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價
更多VT30L60C供應(yīng)商 更新時間2024-10-31 14:43:00

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