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VT3080S

Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS ?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3080S

Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3080S

Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3080S

Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3080S_V01

Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3080S-E3

Trench MOS Schottky technology

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220AB,an

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3080S-E3

Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220AB,

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3080S-E3_V01

Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220AB,

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3080SHM3-4W

Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS ?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3080S-M3-4W

Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS ?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3080S_12

Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3080S_15

Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3080S-E3/4W

Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3080S-E3_15

Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3080S-E3/4W

包裝:管件 封裝/外殼:TO-220-3 類別:分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述:DIODE SCHOTTKY 30A 80V TO-220AB

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

VT3080SHM3/4W

包裝:管件 封裝/外殼:TO-220-3 類別:分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述:DIODE SCHOTTKY 30A 80V TO-220AB

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

VT3080S-M3/4W

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:TO-220-3 類別:分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述:DIODE SCHOTTKY 30A 80V TO-220AB

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

詳細(xì)參數(shù)

  • 型號:

    VT3080S

  • 制造商:

    VISHAY

  • 制造商全稱:

    Vishay Siliconix

  • 功能描述:

    Trench MOS Barrier Schottky Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
VISHAY
1809+
TO-220
3675
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價(jià)
VIS
23+
TO-220AB
10000
公司只做原裝正品
詢價(jià)
VIS
22+
TO-220AB
6000
十年配單,只做原裝
詢價(jià)
VIS
23+
TO-220AB
6000
原裝正品,支持實(shí)單
詢價(jià)
VISHAY(威世)
23+
TO220
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
詢價(jià)
VIS
22+
TO-220AB
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)
24+
N/A
64000
一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
詢價(jià)
Vishay General Semiconductor -
24+
TO-220-3
9350
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
詢價(jià)
VIA
24+
BGA
765
詢價(jià)
VIA
22+
BGA-552
9600
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實(shí)單!
詢價(jià)
更多VT3080S供應(yīng)商 更新時(shí)間2021-9-14 10:50:00