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VS-3C10ET07T-M3中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
| 廠商型號(hào) |
VS-3C10ET07T-M3 |
| 功能描述 | 650 V Power SiC Gen 3 Merged PIN Schottky Diode, 10 A |
| 文件大小 |
146.33 Kbytes |
| 頁(yè)面數(shù)量 |
5 頁(yè) |
| 生產(chǎn)廠商 | Vishay Siliconix |
| 企業(yè)簡(jiǎn)稱(chēng) |
Vishay【威世科技】 |
| 中文名稱(chēng) | 威世科技半導(dǎo)體官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-1-26 17:08:00 |
VS-3C10ET07T-M3規(guī)格書(shū)詳情
FEATURES
? Majority carrier diode using Schottky technology
on SiC wide band gap material
? Improved VF and efficiency by thin wafer
technology
? Positive VF temperature coefficient for easy
paralleling
? Virtually no recovery tail and no switching losses
? Temperature invariant switching behavior
? 175 °C maximum operating junction temperature
? MPS structure for high ruggedness to forward current
surge events
? Meets JESD 201 class 2 whisker test
? Solder bath temperature 275 °C maximum, 10 s per
JESD 22-B106
? Material categorization: for definitions of compliance
DESCRIPTION / APPLICATIONS
Wide band gap SiC based 650 V Schottky diode, designed
for high performance and ruggedness.
Optimum choice for high speed hard switching and efficient
operation over a wide temperature range, it is also
recommended for all applications suffering from Silicon
ultrafast recovery behavior.
Typical applications include AC/DC PFC and DC/DC ultra
high frequency output rectification in FBPS and LLC
converters.
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