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VP0550N3-G中文資料SUTEX數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

VP0550N3-G
廠商型號(hào)

VP0550N3-G

功能描述

P-Channel Enhancement-Mode Vertical DMOS FETs

文件大小

669.46 Kbytes

頁(yè)面數(shù)量

5 頁(yè)

生產(chǎn)廠商 Supertex, Inc
企業(yè)簡(jiǎn)稱(chēng)

SUTEX

中文名稱(chēng)

Supertex, Inc官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-5-28 13:43:00

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VP0550N3-G規(guī)格書(shū)詳情

General Description

The Supertex VP0550 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Features

? Free from secondary breakdown

? Low power drive requirement

? Ease of paralleling

? Low CISS and fast switching speeds

? High input impedance and high gain

? Excellent thermal stability

? Integral source-to-drain diode

Applications

? Motor controls

? Converters

? Amplifiers

? Switches

? Power supply circuits

? Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

產(chǎn)品屬性

  • 型號(hào):

    VP0550N3-G

  • 功能描述:

    MOSFET 500V 125Ohm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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