VP0300B

P-Channel Enhancement-Mode MOSFET Transistors

VP0300B-E3

包裝：管件 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 單個 描述：MOSFET P-CH 30V 0.32A TO-205

VP0300L

P-Channel30-V(D-S)MOSFETs

VP0300L

P-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped

VP0300L

P-ChannelEnhancement-ModeMOSFETTransistors

VP0300L

P-Channel30-V(D-S)MOSFETs

features
High-SideSwitching
LowOn-Resistance:1.5

ModerateThreshold:–3.1V
FastSwitchingSpeed:17ns
LowInputCapacitance:60pF benefits
EaseinDrivingSwitches
LowOffset(Error)Voltage
Low-VoltageOperation
High-SpeedSwitching
EasilyDrivenWithoutB

VP0300LS

P-Channel30-V(D-S)MOSFETs

VP0300LS

P-Channel30-V(D-S)MOSFETs

features
High-SideSwitching
LowOn-Resistance:1.5

ModerateThreshold:–3.1V
FastSwitchingSpeed:17ns
LowInputCapacitance:60pF benefits
EaseinDrivingSwitches
LowOffset(Error)Voltage
Low-VoltageOperation
High-SpeedSwitching
EasilyDrivenWithoutB

VP0300LS

P-ChannelEnhancement-ModeMOSFETTransistors

VP0300M

P-ChannelEnhancementModeSwitch

VPO0300L

P-ChannelEnhancement-ModeMOSFETTransistors

ZOD0300A

MODELSZODANDZOH-THRU-BOREROTARYPULSEGENERATORS