VOM617A-8X001T2中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The 110 °C rated VOM617A has a GaAs infrared emitting

diode emitter, which is optically coupled to a silicon planar

phototransistor detector, and is incorporated in a 4 pin

100 mil lead pitch miniflat package. It features a high current

transfer ratio, low coupling capacitance, and high isolation

voltage.

These coupling devices are designed for signal transmission

between two electrically separated circuits.

FEATURES

? Operating temperature from -55 °C to +110 °C

? SOP-4 mini-flat package

? Isolation test voltage, 3750 VRMS

? Low saturation voltage

? Fast switching times

? Low coupling capacitance

? End-stackable, 0.100 (2.54 mm) spacing

? CTR range 50 to 600 , IF = 5 mA

? Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

? PLCs

? Telecommunication

? Lighting control system

? Solar inverters

? AC drives

AGENCY APPROVALS

(All parts are certified under base model VOM617A)

? UL1577

? cUL

? DIN EN 60747-5-5 (VDE 0884-5), available with option 1

? CQC

? FIMKO