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K10N07FM

OMNIFETFULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

K10N07FM

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SDD10N07

DiscreteDiodes

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

SDD10N07

10AmpereHeatsinkDualTandemPolarityGeneralPurposeRectifierDiodes

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

VNB10N07

OMNIFETFULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNB10N07

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNB10N07

??MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNB10N07,VNK10N07FM,VNP10N07FIandVNV10N07aremonolithicdevicesmadeusingSTMicroelectronicsVIPowerM0Technology,intendedforreplacementofstandardpowerMOSFETSinDCto50KHzapplications.Built-inthermalshut-down,linearcurrentlimitationandovervoltageclamp

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNB10N07-E

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNB10N07TR-E

OMNIFETFULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNK10N07FM

??MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNB10N07,VNK10N07FM,VNP10N07FIandVNV10N07aremonolithicdevicesmadeusingSTMicroelectronicsVIPowerM0Technology,intendedforreplacementofstandardpowerMOSFETSinDCto50KHzapplications.Built-inthermalshut-down,linearcurrentlimitationandovervoltageclamp

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNP10N07

??MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNP10N07isamonolithicdevicemadeusingSGS-THOMSONVerticalIntelligentPowerM0Technology,intendedforreplacementofstandardpowerMOSFETSinDCto50KHzapplications.Built-inthermalshut-down,linearcurrentlimitationandovervoltageclampprotectthechipinharsh

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNP10N07-E

FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNP10N07isamonolithicdevicemadeusingSGS-THOMSONVerticalIntelligentPowerM0Technology,intendedforreplacementofstandardpowerMOSFETSinDCto50KHzapplications.Built-inthermalshut-down,linearcurrentlimitationandovervoltageclampprotectthechipinharsh

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNP10N07FI

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNP10N07FI

OMNIFETFULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNP10N07FI

??MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNB10N07,VNK10N07FM,VNP10N07FIandVNV10N07aremonolithicdevicesmadeusingSTMicroelectronicsVIPowerM0Technology,intendedforreplacementofstandardpowerMOSFETSinDCto50KHzapplications.Built-inthermalshut-down,linearcurrentlimitationandovervoltageclamp

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNV10N07

OMNIFETFULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNV10N07

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

VNV10N07

??MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNB10N07,VNK10N07FM,VNP10N07FIandVNV10N07aremonolithicdevicesmadeusingSTMicroelectronicsVIPowerM0Technology,intendedforreplacementofstandardpowerMOSFETSinDCto50KHzapplications.Built-inthermalshut-down,linearcurrentlimitationandovervoltageclamp

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào):

    VNV10N07TR-E

  • 功能描述:

    電源開關(guān) IC - 配電 FULLY AUTOPROTECTED POWER MOSFET

  • RoHS:

  • 制造商:

    Exar

  • 輸出端數(shù)量:

    1

  • 開啟電阻(最大值):

    85 mOhms

  • 開啟時(shí)間(最大值):

    400 us

  • 關(guān)閉時(shí)間(最大值):

    20 us

  • 工作電源電壓:

    3.2 V to 6.5 V

  • 最大工作溫度:

    + 85 C

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    SOT-23-5

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更多VNV10N07TR-E供應(yīng)商 更新時(shí)間2025-1-1 15:20:00