首頁 >VIT2060G-E3>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
VIT2060G-E3 | Low forward voltage drop, low power losses FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
VIT2060G-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220ABa | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
包裝:管件 封裝/外殼:TO-262-3,長引線,I2Pak,TO-262AA 類別:分立半導體產(chǎn)品 二極管 - 整流器 - 單 描述:DIODE SCHOTTKY 60V 10A TO262AA | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | ||
DualHighVoltageTrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220ABa | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Lowforwardvoltagedrop,lowpowerlosses FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
DualHighVoltageTrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220ABa | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Lowforwardvoltagedrop,lowpowerlosses FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
DualHighVoltageTrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220ABa | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
Lowforwardvoltagedrop,lowpowerlosses FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B106(forTO-220AB,ITO-220ABand | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay |
詳細參數(shù)
- 型號:
VIT2060G-E3
- 制造商:
Vishay Semiconductors
- 功能描述:
20A,60V,DUAL TRENCH SKY RECT.
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
VISHAY |
1809+ |
TO-262 |
3675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
VISHAY/威世 |
23+ |
TO-262AA |
11200 |
原廠授權一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | ||
24+ |
N/A |
64000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
Vishay General Semiconductor - |
24+ |
TO-262AA |
9350 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
Vishay Semiconductor Diodes Di |
22+ |
TO262AA |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 |
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