零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
VI30100S | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A UltraLowVF=0.39VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathte | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
VI30100S | High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
VI30100S | High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
VI30100S | High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
VI30100S | High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
VI30100S | High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
VI30100S | High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A UltraLowVF=0.39VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathte | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICAL | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High efficiency operation FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
詳細(xì)參數(shù)
- 型號:
VI30100S
- 制造商:
VISHAY
- 制造商全稱:
Vishay Siliconix
- 功能描述:
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
VISHAY/威世 |
2024 |
TO-262 |
501614 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力高端行業(yè)供應(yīng)商 |
詢價 | ||
VISHAY |
23+ |
TO-262 |
8600 |
全新原裝現(xiàn)貨 |
詢價 | ||
VISHAYHONGKONGLIMITED |
24+ |
2410 |
詢價 | ||||
VISHAY |
TO-262 |
30216 |
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S |
詢價 | |||
2020+ |
TO-262 |
8000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | |||
POWER |
24+ |
TO-262 |
12000 |
原裝正品現(xiàn)貨 |
詢價 | ||
VISHAY/威世 |
22+ |
TO-262 |
5623 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
VISHAY/威世 |
22+ |
TO-262 |
20000 |
保證原裝正品,假一陪十 |
詢價 | ||
VISHAY |
1809+ |
TO-262 |
3675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
VISHAY |
23+ |
TO-262 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 |
相關(guān)規(guī)格書
更多- VI30100S-E3/4W
- VI30200C-E3/4W
- VI-302-DP-FC-S
- VI-319-DP-RC-S
- VI-322-DP-FC-S
- VI40120C-E3/4W
- VI-402-DP-RC-S
- VI-415-DP-RC-S
- VI-502-DP-RC-S
- VI-508-DP-RC-S
- VI-509-DP-RC-S
- VI-602-DP-RC-S
- VI800A-232U
- VI800A-N485U
- VI800A-RELAY
- VI-ANN-CQ
- VI-B60-CU
- VIBLSD1-S12-S12-DIP
- VIBLSD1-S12-S15-DIP
- VIBLSD1-S12-S5-DIP
- VIBLSD1-S24-S12-SIP
- VIBLSD1-S24-S5-DIP
- VIBLSD1-S5-S12-DIP
- VIBLSD1-S5-S15-SIP
- VIBLSD1-S5-S5-SIP
- VI-J51-CY
- VI-J60-CX
- VI-J61-CY
- VI-JT3-CW
- VI-JW1-CY
- VI-LJ01-EY
- VIM-404-DP-RC-S-HV
- VIM-808-DP-RC-S-HV
- VIM-828-DP5.7-6-HV-RH-W
- VIM-878-DP-RC-S-HV
- VINCO-TOUCH
- VIPER06HN
- VIPER06HSTR
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- VIPER06XSTR
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- VIPER100A-22-E
- VIPER100ASP-E
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相關(guān)庫存
更多- VI-301-DP-RC-S
- VI30202C-M3/4W
- VI-302-DP-RC-S
- VI-321-DP-RC-S
- VI-322-DP-RC-S
- VI-401-DP-RC-S
- VI-415-DP-FH-W
- VI-422-DP-RC-S
- VI-508-DP-FC-S
- VI-509-DP-FC-S
- VI-602-DP-FC-S
- VI-607-DP-RC-S
- VI800A-ETH
- VI800A-POE
- VI800A-TTLU
- VI-AWW-CU
- VI-B70-IY
- VIBLSD1-S12-S12-SIP
- VIBLSD1-S12-S15-SIP
- VIBLSD1-S12-S5-SIP
- VIBLSD1-S24-S15-SIP
- VIBLSD1-S24-S5-SIP
- VIBLSD1-S5-S12-SIP
- VIBLSD1-S5-S5-DIP
- VI-J43-EZ
- VI-J60-CW
- VI-J61-CX
- VI-J63-CW
- VI-JT3-CX
- VI-JW2-CW
- VI-LUL-IU
- VIM-503-DP-FC-S-HV
- VIM-828-DP13.2-RC-S-LV
- VIM-878-DP-FC-S-LV
- VIM-878-DP-RC-S-LV
- VIP2B226S08B
- VIPER06HS
- VIPER06LN
- VIPER06LSTR
- VIPER06XS
- VIPER06XSTR-CUTTAPE
- VIPER100-22-E
- VIPER100A-E
- VIPER100ASPTR-E
- VIPER12A