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VI20150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

UltraLowVF=0.59VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordanc

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20150C-E3

Trench MOS Schottky technology

UltraLowVF=0.59VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20150C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220ABa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20150C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

UltraLowVF=0.59VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordanc

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20150C-E3SLASH4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

UltraLowVF=0.59VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordanc

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20150C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20150C-E3SLASH4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VI20150CHM3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    VI20150C

  • 制造商：

    VISHAY

  • 制造商全稱(chēng)：

    Vishay Siliconix

  • 功能描述：

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
VISHAY/威世
24+
TO-262
501615
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
VISHAY
23+
TO-262
8600
全新原裝現(xiàn)貨
 詢價(jià)
原裝
25+23+
13676
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
VISHAY
24+
TO262
8000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
 詢價(jià)
VISHAY/威世
2447
TO262
100500
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
VISHAY/威世
23+
TO262
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
VISHAY
25+
1750
原廠原裝,價(jià)格優(yōu)勢(shì)!13246658303
 詢價(jià)
VISHAY/威世
24+
NA/
4680
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票
 詢價(jià)
VISHAY
20+
TO262
1430
進(jìn)口原裝現(xiàn)貨,假一賠十
 詢價(jià)
VISHAY
21+
TO262
1430
原裝現(xiàn)貨假一賠十
 詢價(jià)
更多VI20150C供應(yīng)商 更新時(shí)間2025-4-27 10:45:00

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