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VF20120S

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,per ??JESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandin ??accordancetoWEEE2002/96/EC ?Haloge

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF20120S

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF20120S

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF20120S_V01

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF20120S-E3

High Voltage Trench MOS Barrier Schottky Rectifier

UltraLowVF=0.50VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD2

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF20120S-E3

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB,

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF20120S-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,per ??JESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandin ??accordancetoWEEE2002/96/EC ?Haloge

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

UltraLowVF=0.54VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF20120SG_V01

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATION

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF20120SG-E3

High Voltage Trench MOS Barrier Schottky Rectifier

UltraLowVF=0.54VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF20120SG-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

UltraLowVF=0.54VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,perJESD22-B

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF20120S_15

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF20120S-E3

High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF20120S-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF20120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF20120SG_10

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VF20120SG_15

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào):

    VF20120S

  • 制造商:

    VISHAY

  • 制造商全稱:

    Vishay Siliconix

  • 功能描述:

    High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
VISHAY
23+
TO-220
8600
全新原裝現(xiàn)貨
詢價(jià)
VISHAY原裝
22+23+
TO-220F
23890
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
VISHAY原裝
19+
TO-220F
9860
一級(jí)代理
詢價(jià)
VISHAY
2020+
TO-220F
8000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
VISHAY
2023+
TO-220
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
詢價(jià)
VISHAY/威世
23+
TO-220
90000
只做原廠渠道價(jià)格優(yōu)勢可提供技術(shù)支持
詢價(jià)
VISHAY/威世
23+
TO-220
10000
公司只做原裝正品
詢價(jià)
VISHAY
23+
TO220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
VISHAY/威世
23+
TO-220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
VISHAY/威世
2022+
ITO-220A
12888
原廠代理 終端免費(fèi)提供樣品
詢價(jià)
更多VF20120S供應(yīng)商 更新時(shí)間2024-10-28 16:26:00