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VBMB15R07S

N-Channel 500V(D-S) Super Junction Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ?EffectiveCossSpecified ?ComplianttoRoHSdirective2002/95/EC APPLICATIONS ?SwitchModePow

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

VBE15R07S

N-Channel500V(D-S)SuperJunctionPowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ?EffectiveCossSpecified ?ComplianttoRoHSdirective2002/95/EC APPLICATIONS ?SwitchModePow

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

VBFB15R07S

N-Channel500V(D-S)SuperJunctionPowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ?EffectiveCossSpecified ?ComplianttoRoHSdirective2002/95/EC APPLICATIONS ?SwitchModePow

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

VBM15R07S

N-Channel500V(D-S)SuperJunctionPowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ?EffectiveCossSpecified ?ComplianttoRoHSdirective2002/95/EC APPLICATIONS ?SwitchModePow

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
VBsemi(臺灣微碧)
2112+
TO-220F
105000
50個(gè)/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期
 詢價(jià)
VBSEMI
24+
con
35960
查現(xiàn)貨到京北通宇商城
 詢價(jià)
VBSEMI臺灣微碧
23+
TO220F
22820
原裝正品，支持實(shí)單
 詢價(jià)
更多VBMB15R07S供應(yīng)商 更新時(shí)間2025-1-6 11:01:00

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