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VB10150S

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) ?Compo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB10150S

High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB10150S-E3

High efficiency operation

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) ?Compo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB10150S-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) ?Compo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB10150S-E3/8W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) ?Compo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB10150S-E3SLASH4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) ?Compo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB10150S-E3SLASH8W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) ?Compo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB10150S-M3

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C ?Materialcategorization:? fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 TYPICALAPPLICAT

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB10150S-M3_V01

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C ?Materialcategorization:? fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 TYPICALAPPLICAT

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB10150S-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    VB10150S

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
VISHAY
23+
TO-263
8600
全新原裝現(xiàn)貨
 詢價(jià)
JINGDAO/晶導(dǎo)微
23+
GBU
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
VISHAY/威世
22+
TO-263
6000
十年配單,只做原裝
 詢價(jià)
VISHAY/威世通
23+
TO-263
6000
原裝正品，支持實(shí)單
 詢價(jià)
VISHAY/威世通
22+
TO-263
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
VISHAY
24+
TO-263
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
VISHAY
2020+
TO-263
30
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
VISHAY
2020+
TO-263
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
VISHAY/威世
2022+
241
全新原裝 貨期兩周
 詢價(jià)
VISHAY/威世
22+
TO-263
20000
保證原裝正品,假一陪十
 詢價(jià)
更多VB10150S供應(yīng)商 更新時(shí)間2025-3-29 14:02:00

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