V54C3256404VBS中文資料茂矽電子數(shù)據(jù)手冊PDF規(guī)格書

Description

The V54C3256(16/80/40)4V(T/S/B) is a four bank Synchronous DRAM organized as 4 banks x 4Mbit x 16, 4 banks x 8Mbit x 8, or 4 banks x 16Mbit x 4. The V54C3256(16/80/40)4V(T/S/B) achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multi ple bits and then synchronizes the output data to a

system clock

Features

■ 4 banks x 4Mbit x 16 organization

■ 4 banks x 8Mbit x 8 organization

■ 4 banks x16Mbit x 4 organization

■ High speed data transfer rates up to 166 MHz

■ Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge

■ Single Pulsed RAS Interface

■ Data Mask for Read/Write Control

■ Four Banks controlled by BA0 & BA1

■ Programmable CAS Latency: 2, 3

■ Programmable Wrap Sequence: Sequential or Interleave

■ Programmable Burst Length:

1, 2, 4, 8 for Sequential Type

1, 2, 4, 8 for Interleave Type

■ Multiple Burst Read with Single Write Operation

■ Automatic and Controlled Precharge Command

■ Random Column Address every CLK (1-N Rule)

■ Power Down Mode

■ Auto Refresh and Self Refresh

■ Refresh Interval: 8192 cycles/64 ms

■ Available in 54 Pin TSOP II, 60 Ball WBGA and SOC BGA

■ LVTTL Interface

■ Single +3.3 V ±0.3 V Power Supply