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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
V30100C	文件：167.4 Kbytes Page：5 Pages	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A UltraLowVF=0.455VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
V30100C-E3	文件：178.93 Kbytes Page：6 Pages	Trench MOS Schottky technology UltraLowVF=0.455VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbatht	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
V30100C-E3	文件：214.65 Kbytes Page：6 Pages	Dual High Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) ?Lowthermalresistance ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
V30100C-E3/4W	文件：167.4 Kbytes Page：5 Pages	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A UltraLowVF=0.455VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
V30100C-E3_V01	文件：214.65 Kbytes Page：6 Pages	Dual High Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C(forTO-263AB package) ?Lowthermalresistance ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
V30100CI	文件：136.73 Kbytes Page：5 Pages	Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICA	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
V30100CI_V01	文件：136.73 Kbytes Page：5 Pages	Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICA	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
V30100P	文件：96 Kbytes Page：4 Pages	Dual High-Voltage Trench MOS Barrier Schottky Rectifier UltraLowVF=0.57VatIF=8A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip260°C,40s ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC TYPIC	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
V30100PW	文件：83.58 Kbytes Page：4 Pages	Dual High-Voltage Trench MOS Barrier Schottky Rectifier UltraLowVF=0.58VatIF=8A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?ComplianttoRoHSdirective2002/95/ECandinaccordancetoWEEE2002/96/EC	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
V30100PW-M3-4W	文件：83.58 Kbytes Page：4 Pages	Dual High-Voltage Trench MOS Barrier Schottky Rectifier UltraLowVF=0.58VatIF=8A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?ComplianttoRoHSdirective2002/95/ECandinaccordancetoWEEE2002/96/EC	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
V30100S	文件：168.56 Kbytes Page：5 Pages	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A UltraLowVF=0.39VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathte	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
V30100S	文件：141.87 Kbytes Page：5 Pages	High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
V30100S_V01	文件：141.87 Kbytes Page：5 Pages	High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
V30100S-E3	文件：213.12 Kbytes Page：6 Pages	High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
V30100S-E3/45	文件：168.56 Kbytes Page：5 Pages	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A UltraLowVF=0.39VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathte	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
V30100S-E3_V01	文件：213.12 Kbytes Page：6 Pages	High Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
V30100SG	文件：168.82 Kbytes Page：5 Pages	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
V30100SG	文件：143.19 Kbytes Page：5 Pages	High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICAL	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
V30100SG_V01	文件：143.19 Kbytes Page：5 Pages	High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICAL	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
V30100SG-E3	文件：161.5 Kbytes Page：6 Pages	High efficiency operation FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?Solderdip275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

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型號：
V301
制造商：
VISHAY
制造商全稱：
Vishay Siliconix
功能描述：
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
深圳市樂創(chuàng)天科技有限公司	V30100C	VISHAY	2009	TO-220	12	原裝正品現(xiàn)貨	詢價(jià)
深圳市博浩通科技有限公司	V30100C	VISHAY	23+	TO-220	8600	全新原裝現(xiàn)貨	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	V30100C	VISHAY	1822+	TO-220	9852	只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!	詢價(jià)
瀚佳科技(深圳)有限公司	V30100C	VISHAY原裝	24+	TO-220	9860	一級代理	詢價(jià)
深圳市富安?？萍加邢薰?/a>	V30100C	VISHIAY	21+	TO-220	6000	絕對原裝現(xiàn)貨	詢價(jià)
深圳市維爾達(dá)電子有限公司	V30100C	VISHAY	2023+	TO-220	80000	一級代理/分銷渠道價(jià)格優(yōu)勢十年芯程一路只做原裝正品	詢價(jià)
深圳市航潤創(chuàng)能電子集團(tuán)有限公司	V30100C	Toohong	21+	TO-220	3290	原裝現(xiàn)貨假一賠十	詢價(jià)
深圳市國宇半導(dǎo)體科技有限公司	V30100C	VISHAY/威世	23+	TO-220	10000	公司只做原裝正品	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	V30100C	VISHAY/威世	23+	TO220	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市河鋒鑫科技有限公司	V30100C	VISHAY/威世	2022+	TO-220	12888	原廠代理終端免費(fèi)提供樣品	詢價(jià)

更多V301供應(yīng)商更新時(shí)間2024-12-30 14:08:00

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