V29C51400T中文資料茂矽電子數(shù)據(jù)手冊PDF規(guī)格書

Description

The V29C51400T/V29C51400B is a high speed 262,144 x 16 bit or 524,288 x 8-bit CMOS flash memory. Writing or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, write enable WE, and output enable OE controls to eliminate bus contention.

Features

■ 256K x 16-bit or 512K x 8-bit Organization

■ Address Access Time: 70, 90, 120 ns

■ Single 5V ± 10 Power Supply

■ Sector Erase Mode Operation

■ 16KB Boot Block (lockable)

■ 1K bytes per Sector, 512 Sectors

– Sector-Erase Cycle Time: 10ms (Max)

– Byte-Write Cycle Time: 20μs (Max)

■ Minimum 10,000 Erase-Program Cycles

■ Low power dissipation

– Active Read Current: 19mA (Typ)

– Active Program Current: 30mA (Typ)

– Standby Current: 100μA (Max)

■ Hardware Data Protection

■ Low VCC Program Inhibit Below 3.5V

■ Self-timed write/erase operations with end-ofcycle detection

– DATA Polling

– Toggle Bit

■ CMOS and TTL Interface

■ Available in two versions

– V29C51400T (Top Boot Block)

– V29C51400B (Bottom Boot Block)

■ Packages:

– 48-pin TSOP