V29C51001B-70P中文資料茂矽電子數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Description

The V29C51001T/V29C51001B is a high speed 131,072 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, program enable WE, and output enable OE controls to eliminate bus contention.

Features

■ 128Kx8-bit Organization

■ Address Access Time: 45, 70, 90 ns

■ Single 5V ± 10 Power Supply

■ Sector Erase Mode Operation

■ 8KB Boot Block (lockable)

■ 512 bytes per Sector, 256 Sectors

– Sector-Erase Cycle Time: 10ms (Max)

– Byte-Program Cycle Time: 20μs (Max)

■ Minimum 10,000 Erase-Program Cycles

■ Low power dissipation

– Active Read Current: 20mA (Typ)

– Active Program Current: 30mA (Typ)

– Standby Current: 100μA (Max)

■ Hardware Data Protection

■ Low VCC Program Inhibit Below 2.5V

■ Self-timed program/erase operations with end-of-cycle detection

– DATA Polling

– Toggle Bit

■ CMOS and TTL Interface

■ Available in two versions

– V29C51001T (Top Boot Block)

– V29C51001B (Bottom Boot Block)

■ Packages:

– 32-pin Plastic DIP

– 32-pin TSOP-I

– 32-pin PLCC