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V20200C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A

UltraLowVF=0.60VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathte

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20200C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20200C-E3

Trench MOS Schottky technology

UltraLowVF=0.60VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathte

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20200C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20200C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A

UltraLowVF=0.60VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathte

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20200C-E3_V01

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20200C-E3SLASH4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A

UltraLowVF=0.60VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathte

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20200C_09

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20200C_15

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V20200C_15

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    V20200C

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
VISHAY/威世
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
Vishay(威世)
2021/2022+
標(biāo)準(zhǔn)封裝
6500
原廠原裝現(xiàn)貨訂貨價(jià)格優(yōu)勢終端BOM表可配單提供樣品
 詢價(jià)
VISHAY/威世
2048+
TO-220
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
Vishay(威世)
22+
NA
6500
原廠原裝現(xiàn)貨
 詢價(jià)
Vishay(威世)
23+
N/A
11800
詢價(jià)
VISHAY/威世
24+
NA/
4250
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
 詢價(jià)
VISHAY
2025+
TO220
3625
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
 詢價(jià)
Vishay(威世)
22+
N/A
11800
可配單提供樣品
 詢價(jià)
Vishay(威世)
24+
N/A
11800
可配單提供樣品
 詢價(jià)
VISHAY
17+
TO220
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
更多V20200C供應(yīng)商 更新時(shí)間2025-4-17 11:00:00

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