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UPD753106

4-BIT SINGLE-CHIP MICROCONTROLLER

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPD753106

4-bit Single-chip Microcontrollers

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPD753106GC

4-BIT SINGLE-CHIP MICROCONTROLLER

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPD753106GC-XXX-8BS

MOS INTEGRATED CIRCUIT

FEATURES ?Lowvoltageoperation:VDD=1.8to5.5V ?Canbedrivenbytwo1.5Vbatteries ?Internalmemory ?Programmemory(ROM): 4096×8bits(μPD753104) 6144×8bits(μPD753106) 8192×8bits(μPD753108) ?Datamemory(RAM): 512×4bits ?Capableofhigh-speedoperationandvari

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD753106GC-XXX-8BS-A

MOS INTEGRATED CIRCUIT

FEATURES ?Lowvoltageoperation:VDD=1.8to5.5V ?Canbedrivenbytwo1.5Vbatteries ?Internalmemory ?Programmemory(ROM): 4096×8bits(μPD753104) 6144×8bits(μPD753106) 8192×8bits(μPD753108) ?Datamemory(RAM): 512×4bits ?Capableofhigh-speedoperationandvari

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD753106GC-XXX-AB8

MOS INTEGRATED CIRCUIT

FEATURES ?Lowvoltageoperation:VDD=1.8to5.5V ?Canbedrivenbytwo1.5Vbatteries ?Internalmemory ?Programmemory(ROM): 4096×8bits(μPD753104) 6144×8bits(μPD753106) 8192×8bits(μPD753108) ?Datamemory(RAM): 512×4bits ?Capableofhigh-speedoperationandvari

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD753106GK

4-BIT SINGLE-CHIP MICROCONTROLLER

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPD753106GK-XXX-8A8

MOS INTEGRATED CIRCUIT

FEATURES ?Lowvoltageoperation:VDD=1.8to5.5V ?Canbedrivenbytwo1.5Vbatteries ?Internalmemory ?Programmemory(ROM): 4096×8bits(μPD753104) 6144×8bits(μPD753106) 8192×8bits(μPD753108) ?Datamemory(RAM): 512×4bits ?Capableofhigh-speedoperationandvari

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD753106GK-XXX-9ET

MOS INTEGRATED CIRCUIT

FEATURES ?Lowvoltageoperation:VDD=1.8to5.5V ?Canbedrivenbytwo1.5Vbatteries ?Internalmemory ?Programmemory(ROM): 4096×8bits(μPD753104) 6144×8bits(μPD753106) 8192×8bits(μPD753108) ?Datamemory(RAM): 512×4bits ?Capableofhigh-speedoperationandvari

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD753106GK-XXX-9ET-A

MOS INTEGRATED CIRCUIT

FEATURES ?Lowvoltageoperation:VDD=1.8to5.5V ?Canbedrivenbytwo1.5Vbatteries ?Internalmemory ?Programmemory(ROM): 4096×8bits(μPD753104) 6144×8bits(μPD753106) 8192×8bits(μPD753108) ?Datamemory(RAM): 512×4bits ?Capableofhigh-speedoperationandvari

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

供應商型號品牌批號封裝庫存備注價格
NEC
24+
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20
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22+
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2987
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23+
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12335
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2000
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20
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22+23+
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8696
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1948+
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6852
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NEC
20+
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500
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NEC
21+
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6000
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NEC
22+
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9600
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NEC
22+
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6550
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更多UPD753106供應商 更新時間2024-11-18 16:00:00