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UPD16855DG

DUAL HIGH-SIDE SWITCH FOR USB APPLICATION

DESCRIPTION ThisproductisthepowerswitchICwithovercurrentlimit,usedforthepowersupplybusoftheUniversal-SerialBus(USB). 2circuitbuildsinthePchpowerMOSFETintheswitchpart,andthisproductrealizeslowonresistance(100m?TYP.)respectively. Andtheovercurrentdete

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPD16855DG

MOS INTEGRATED CIRCUIT

FEATURES ?PchpowerMOSFET,2circuitbuildingin ?Over-currentdetectioncircuitisbuiltinanditsresultisoutputtedfromflag-pin(“L”active) ?Preventfromdroppingpowersupplybyovercurrentlimitcircuit ?Thermalshutdowncircuitbuildingin ?UnderVoltageLockedOut(UVLO)ci

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

C16855

~25?mediumbeamoptimizedforCREEXP-LandXM-L.VariantmadefromPC.

LEDILLEDiL

萊迪爾萊迪爾公司LEDIL

UPD16855A

DUALHIGH-SIDESWITCHFORUSBAPPLICATION

DESCRIPTION ThisproductisthepowerswitchICwithovercurrentlimit,usedforthepowersupplybusoftheUniversal-SerialBus(USB). 2circuitbuildsinthePchpowerMOSFETintheswitchpart,andthisproductrealizeslowonresistance(100m?TYP.)respectively. Andtheovercurrentdete

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPD16855A

MOSINTEGRATEDCIRCUIT

FEATURES ?PchpowerMOSFET,2circuitbuildingin ?Over-currentdetectioncircuitisbuiltinanditsresultisoutputtedfromflag-pin(“L”active) ?Preventfromdroppingpowersupplybyovercurrentlimitcircuit ?Thermalshutdowncircuitbuildingin ?UnderVoltageLockedOut(UVLO)ci

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD16855AG

MOSINTEGRATEDCIRCUIT

FEATURES ?PchpowerMOSFET,2circuitbuildingin ?Over-currentdetectioncircuitisbuiltinanditsresultisoutputtedfromflag-pin(“L”active) ?Preventfromdroppingpowersupplybyovercurrentlimitcircuit ?Thermalshutdowncircuitbuildingin ?UnderVoltageLockedOut(UVLO)ci

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD16855AG

DUALHIGH-SIDESWITCHFORUSBAPPLICATION

DESCRIPTION ThisproductisthepowerswitchICwithovercurrentlimit,usedforthepowersupplybusoftheUniversal-SerialBus(USB). 2circuitbuildsinthePchpowerMOSFETintheswitchpart,andthisproductrealizeslowonresistance(100m?TYP.)respectively. Andtheovercurrentdete

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPD16855BC

MOSINTEGRATEDCIRCUIT

FEATURES ?PchpowerMOSFET,2circuitbuildingin ?Over-currentdetectioncircuitisbuiltinanditsresultisoutputtedfromflag-pin(“L”active) ?Preventfromdroppingpowersupplybyovercurrentlimitcircuit ?Thermalshutdowncircuitbuildingin ?UnderVoltageLockedOut(UVLO)ci

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD16855BC

DUALHIGH-SIDESWITCHFORUSBAPPLICATION

DESCRIPTION ThisproductisthepowerswitchICwithovercurrentlimit,usedforthepowersupplybusoftheUniversal-SerialBus(USB). 2circuitbuildsinthePchpowerMOSFETintheswitchpart,andthisproductrealizeslowonresistance(100m?TYP.)respectively. Andtheovercurrentdete

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPD16855BG

DUALHIGH-SIDESWITCHFORUSBAPPLICATION

DESCRIPTION ThisproductisthepowerswitchICwithovercurrentlimit,usedforthepowersupplybusoftheUniversal-SerialBus(USB). 2circuitbuildsinthePchpowerMOSFETintheswitchpart,andthisproductrealizeslowonresistance(100m?TYP.)respectively. Andtheovercurrentdete

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPD16855BG

MOSINTEGRATEDCIRCUIT

FEATURES ?PchpowerMOSFET,2circuitbuildingin ?Over-currentdetectioncircuitisbuiltinanditsresultisoutputtedfromflag-pin(“L”active) ?Preventfromdroppingpowersupplybyovercurrentlimitcircuit ?Thermalshutdowncircuitbuildingin ?UnderVoltageLockedOut(UVLO)ci

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD16855CG

MOSINTEGRATEDCIRCUIT

FEATURES ?PchpowerMOSFET,2circuitbuildingin ?Over-currentdetectioncircuitisbuiltinanditsresultisoutputtedfromflag-pin(“L”active) ?Preventfromdroppingpowersupplybyovercurrentlimitcircuit ?Thermalshutdowncircuitbuildingin ?UnderVoltageLockedOut(UVLO)ci

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD16855CG

DUALHIGH-SIDESWITCHFORUSBAPPLICATION

DESCRIPTION ThisproductisthepowerswitchICwithovercurrentlimit,usedforthepowersupplybusoftheUniversal-SerialBus(USB). 2circuitbuildsinthePchpowerMOSFETintheswitchpart,andthisproductrealizeslowonresistance(100m?TYP.)respectively. Andtheovercurrentdete

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

US16855

DUALHIGH-SIDESWITCHFORUSBAPPLICATION

UTCUnisonic Technologies

友順友順科技股份有限公司

US16855

DUALHIGH-SIDESWITCHFORUSBAPPLICATION

UTCUnisonic Technologies

友順友順科技股份有限公司

詳細(xì)參數(shù)

  • 型號:

    UPD16855DG

  • 制造商:

    NEC

  • 制造商全稱:

    NEC

  • 功能描述:

    DUAL HIGH-SIDE SWITCH FOR USB APPLICATION

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
23+
SMD
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
NEC
22+
SMD
50000
只做原裝假一罰十,歡迎咨詢
詢價
NEC
24+
SSOP
7500
絕對原裝自家現(xiàn)貨!真實(shí)庫存!歡迎來電!
詢價
NEC
21+
SSOP
5000
全新原裝現(xiàn)貨 價格優(yōu)勢
詢價
NEC
99+
SSOP
2300
原裝/現(xiàn)貨
詢價
NEC
23+
SSOP
8678
原廠原裝
詢價
NEC
23+
SSOP
7000
絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
詢價
NEC
24+
SSOP
8111
詢價
NEC
2016+
SOP
6523
只做原裝正品現(xiàn)貨!或訂貨!
詢價
NEC
22+
SSOP
8200
全新原裝現(xiàn)貨!自家?guī)齑?
詢價
更多UPD16855DG供應(yīng)商 更新時間2025-1-3 11:01:00