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BD649

NPNSILICONPOWERDARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBD645,BD647,BD649andBD651 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

POINN

Power Innovations Ltd

BD649

NPNSILICONDARLINGTONTRANSISTORS

NPNSILICONDARLINGTONTRANSISTORS

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BD649

SILICONDARLINGTONPOWERTRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. NPNcomplementsareBD643,BD645,BD647

COMSET

Comset Semiconductor

BD649

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION ?Collector-EmitterBreakdownVoltage-:V(BR)CEO=100V(Min) ?HighDCCurrentGain:hFE=750(Min)@IC=3A ?LowSaturationVoltage ?ComplementtoTypeBD650 APPLICATIONS ?DesignedforuseascomplementaryAFpush-pulloutputstageapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BD649

PNPSILICONDARLINGTONTRANSISTORS

NPNSILICONDARLINGTONTRANSISTORS

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BD649

NPNSILICONPOWERDARLINGTONS

NPNSILICONPOWERDARLINGTONS ●RoHScompliant* ●DesignedforComplementaryUsewithBD646,BD648,BD650andBD652 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

BournsBourns Electronic Solutions

伯恩斯

BD649

NPNSILICONPOWERDARLINGTONS

NPNSILICONPOWERDARLINGTONS ●RoHScompliant* ●DesignedforComplementaryUsewithBD646,BD648,BD650andBD652 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

BournsBourns Electronic Solutions

伯恩斯

BD649

SILICONDARLINGTONPOWERTRANSISTORS

COMSET

Comset Semiconductor

BD649

NPNSiliconDarlingtonTransistors

Eplbasepowerdarlingtontransistors(62.5W) BD643,BD645,BD647,andBD649aremonolithicNPNSiliconepibasepowerdarlingtontransistorswithdiodeandresistorsinaTO220ABplasticpackage(TOP-66).Thecollectorsofthetwotransistorsareelectricallyconnectedtothemetallicmounting

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

BD649F

iscSiliconNPNDarlingtonPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    UPC649C

  • 制造商：

    Panasonic Industrial Company

  • 功能描述：

    IC

供應商型號品牌批號封裝庫存備注價格
NEC
23+
原廠封裝
9896
詢價
NEC
24+
DIP8
4300
詢價
NEC
23+
DIP8
8890
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
NEC
1802+
DIP8
6528
只做原裝正品現(xiàn)貨,或訂貨假一賠十!
 詢價
NEC
2020+
DIP8
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
NEC
2447
DIP8
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
NEC
23+
DIP8
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NEC
23
DIP8
30000
代理全新原裝現(xiàn)貨 價格優(yōu)勢
 詢價
NEC
97+
DIP8
57
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
NEC
2023+
DIP8
5800
進口原裝,現(xiàn)貨熱賣
 詢價
更多UPC649C供應商 更新時間2025-4-17 17:14:00

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