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UPA1951

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION TheμPA1951isaswitchingdevice,whichcanbedrivendirectlybya1.8Vpowersource. Thedevicefeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES ?1.8Vdri

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA1951

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA1951isaswitchingdevice,whichcanbedriven directlybya1.8Vpowersource. Thedevicefeaturesalowon-stateresistanceandexcellent switchingcharacteristics,andissuitableforapplications suchaspowerswitchofportablemachineandsoon. FEATURES ?1.8V

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA1951TE

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION TheμPA1951isaswitchingdevice,whichcanbedrivendirectlybya1.8Vpowersource. Thedevicefeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES ?1.8Vdri

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA1951TE

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheμPA1951isaswitchingdevice,whichcanbedriven directlybya1.8Vpowersource. Thedevicefeaturesalowon-stateresistanceandexcellent switchingcharacteristics,andissuitableforapplications suchaspowerswitchofportablemachineandsoon. FEATURES ?1.8V

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA1951TE

Dual P-Channel 20 V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?LoadSwitchforPortableApplications ?BatterySwitchforPortableDevices ?Computers -BusSwitch -LoadSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

1951

MALE/FEMALETHREADEDSTANDOFFS

[KEYSTONE] MALE/FEMALETHREADEDSTANDOFFS PC104MOUNTINGKITS NYLONSTANDOFFS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

1951

WIRE&CABLETERMINATION

GREENLEE

Greenlee Communications

1951A

MediumPowerMicrowaveMESFET

DESCRIPTION TheMGF1951Aisa20mWMESFETforS-toKu-banddriveramplifiersandoscillators. Itslead-lessceramicpackageassuresminimumparasitics. FEATURES ?HighGainandHighOutputPowerGLP=9dB,P1dB=13dBm(typ)@f=12GHz ?LeadlessCeramicPackage APPLICATION S-

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

ACK-1951

LEDMODIFIEDDISPLAYANDDRIVERKIT

ACIPOWER

Applied Concepts Inc.

ALN1951

InternallyMatchedLNAModule

ASB

Advanced Semiconductor Business Inc.

詳細(xì)參數(shù)

  • 型號：

    UPA1951

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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更多UPA1951供應(yīng)商 更新時(shí)間2025-6-13 16:01:00

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