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UHV2010

Ultra-High Voltage Chip Resistor

Features: ?Voltageratingsto20000Volts ?Resistancevaluesto10Gohms ?Ultra-highstability ?Verylownoise ?Tolerancesto1 ?Tolerances10andwideraretypicallyuntrimmed ?TCRto100ppm/oC ?RoHScompliantandhalogenfree ?REACHcompliant

SEIStackpole Electronics Inc.

斯塔克波爾斯塔克波爾電子公司

ULN2010

DRIVERCIRCUITSPECIALPURPOSEFORMICROWAVEOVEN

UTCUnisonic Technologies

友順友順科技股份有限公司

ULS-2010H

SELECTIONGUIDETOHIGH-VOLTAGE/HIGH-CURRENT

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

ULS-2010R

SELECTIONGUIDETOHIGH-VOLTAGE/HIGH-CURRENT

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

UP-2010

EnterpriseNetworkSecurityAppliancewithHigh-densityPortsandPoE

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

UPG2010TB

L-BANDSPDTSWITCH

DESCRIPTION TheμPG2010TBisGaAsMMICforL-bandSPDT(SinglePoleDoubleThrow)switchwhichweredevelopedformobilephoneandanotherL-bandapplication. Thisdevicecanoperatefrequencyfrom0.5to2.5GHz,havingthelowinsertionlossandhighisolation. Thisdeviceishousedina6-pi

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPG2010TB

HIGHPOWERSINGLECONTROLL-BANDSPDTSWITCH

DESCRIPTION NECsUPG2010TBisasinglecontrolGaAsMMICL-bandSPDT(SinglePoleDoubleThrow)switchformobilephoneandL-bandapplications. Thisdevicecanoperatefrom0.5to2.5GHz,withlowinsertionlossandhighisolation. Thisdeviceishousedina6-pinsuperminimoldpackage,suit

CEL

California Eastern Labs

UPG2010TB

GaAsINTEGRATEDCIRCUIT

FEATURES ?Supplyvoltage:VDD=2.7to3.0V(2.8VTYP.) ?Switchcontrolvoltage:Vcont(H)=2.7to3.0V(2.8VTYP.) :Vcont(L)=?0.2to+0.2V(0VTYP.) ?Lowinsertionloss:LINS1=0.25dBTYP.@f=0.5to1.0GHz,VDD=2.8V,Vcont=2.8V/0V :LINS2=0.30dBTYP.@f=2.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

URF2010

POWERRECTIFIERS(20A,50-200V)

SwitchmodeFullPlasticDualUltrafastPowerRectifiers ...Designedforuseinswitchingpowersupplies,invertersandasfreewheelingdiodes.Thesestate-of-the-artdeviceshavethefollowingfeatures: ?HighSurgeCapacity ?LowPowerLoss,HighEfficiency ?GlassPassivatedchipjunction

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

USF2010FC

SUPERFASTRECTIFIERS

DSK

Diode Semiconductor Korea

USF2010FC

SuperFastRectifiers

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

UT2010

RECTIFIERS

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UT2010

StandardRecovery,2Ampto4Amp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

UT2010

STANDARDRECOVERYRECTIFIERS

DIGITRON

Digitron Semiconductors

VDA2010CTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDA2010NTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VFCP2010

UltraHighPrecisionZ-FoilFlipChipResistorwithTCRof±0.05ppm/°C,35SpaceSavingversusWraparoundDesignandPCRof5ppmatRatedPower

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VLS2010E

InductorsforPowerCircuitsWoundFerriteVLS-Eseries

OverviewoftheVLS-ESeries FEATURES Magneticshieldtypewoundinductorforpowercircuits. Low-profileproductlineupwithmax.heightsof0.8mm,0.95mm,1.0mm,1.2mm,and1.5mmallowingfordifferentusages. Highmagneticshieldconstructionandcompatiblewithhigh-densitymount

TDKTDK Corporation

TDK株式會社東電化（中國）投資有限公司

VLS2010E

InductorsforPowerCircuitsWoundFerrite

OverviewoftheVLS-ESeries FEATURES Magneticshieldtypewoundinductorforpowercircuits. Low-profileproductlineupwithmax.heightsof0.8mm,0.95mm,1.0mm,1.2mm,and1.5mmallowingfordifferentusages. Highmagneticshieldconstructionandcompatiblewithhigh-densitymount

TDKTDK Corporation

TDK株式會社東電化（中國）投資有限公司

VLS2010E

InductorsforPowerCircuitsWoundFerrite

OverviewoftheVLS-ESeries FEATURES Magneticshieldtypewoundinductorforpowercircuits. Low-profileproductlineupwithmax.heightsof0.8mm,0.95mm,1.0mm,1.2mm,and1.5mmallowingfordifferentusages. Highmagneticshieldconstructionandcompatiblewithhigh-densitymount

TDKTDK Corporation

TDK株式會社東電化（中國）投資有限公司

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20+
電容器
296
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21+
SMD
9866
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24+
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100
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5
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24+
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5
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5
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18+
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288000
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21+
N/A
2500
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更多UHV2010供應(yīng)商 更新時間2021-9-14 10:50:00

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