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UHB20FCT

Dual Common-Cathode Ultrafast Recovery Rectifier

FEATURES ?Oxideplanarchipjunction ?Ultrafastrecoverytimes ?Softrecoverycharacteristics ?Lowswitchinglosses,highefficiency ?Highforwardsurgecapability ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderdip260°C,40s(forTO-22

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

UHB20FCT-E3/4W

Dual Common-Cathode Ultrafast Recovery Rectifier

DualCommon-CathodeUltrafastRecoveryRectifier FEATURES ?Oxideplanarchipjunction ?Ultrafastrecoverytimes ?Softrecoverycharacteristics ?Lowswitchinglosses,highefficiency ?Highforwardsurgecapability ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof24

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

UHB20FCT-E3/8W

Dual Common-Cathode Ultrafast Recovery Rectifier

DualCommon-CathodeUltrafastRecoveryRectifier FEATURES ?Oxideplanarchipjunction ?Ultrafastrecoverytimes ?Softrecoverycharacteristics ?Lowswitchinglosses,highefficiency ?Highforwardsurgecapability ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof24

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

UHB20FCT-E3SLASH4W

Dual Common-Cathode Ultrafast Recovery Rectifier

DualCommon-CathodeUltrafastRecoveryRectifier FEATURES ?Oxideplanarchipjunction ?Ultrafastrecoverytimes ?Softrecoverycharacteristics ?Lowswitchinglosses,highefficiency ?Highforwardsurgecapability ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof24

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

UHB20FCT-E3SLASH8W

Dual Common-Cathode Ultrafast Recovery Rectifier

DualCommon-CathodeUltrafastRecoveryRectifier FEATURES ?Oxideplanarchipjunction ?Ultrafastrecoverytimes ?Softrecoverycharacteristics ?Lowswitchinglosses,highefficiency ?Highforwardsurgecapability ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof24

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

UHB50SC12E1BC3N

Marking：UHB50SC12E1BC3N；Package：E1B；1200V-50A SiC Half-Bridge Module

Features *On-resistance:RDS(on)=19mW(typ) *Operatingtemperature:150°C(max) *Excellentreverserecovery:Qrr=495nC *Lowbodydiodevoltage:VFSD=1.2V *Lowgatecharge:QG=85nC *ThresholdvoltageVG(th):5V(typ)allowing0to15Vdrive *ESDprotected:HBMclass2andCDMc

QORVO

Qorvo, Inc

UHBM45

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIUHBM45isDesignedfor FEATURES: ?Omnigold?MetalizationSystem

ASI

Advanced Semiconductor

UHBS15-1

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIUHBS15-1isDesignedforClassC,FMBaseStationApplicationsupto900MHz. FEATURES: ?InternalInputMatchingNetwork ?PG=9.5dBat15W/900MHz ?Omnigold?MetalizationSystem

ASI

Advanced Semiconductor

UHBS15-2

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIUHBS15-2isDesignedforClassC,FMBaseStationApplicationsupto960MHz. FEATURES: ?InternalInputMatchingNetwork ?PG=9.0dBat15W/960MHz ?Omnigold?MetalizationSystem

ASI

Advanced Semiconductor

UHBS30-1

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIUHBS30-1isDesignedforClassC,FMBaseApplicationsupto900MHz. FEATURES: ?InternalInputMatchingNetwork ?PG=7.5dBat30W/900MHz ?Omnigold?MetalizationSystem

ASI

Advanced Semiconductor

詳細參數(shù)

  • 型號：

    UHB

  • 制造商：

    SCHURTER

  • 制造商全稱：

    Schurter Inc.

  • 功能描述：

    Fuseholder Open Design, 5 x 20 mm, Solder, transparent, Cover

供應(yīng)商型號品牌批號封裝庫存備注價格
VISHAY
12+
TO-263
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
 詢價
VISHAY
23+
D2PAK(TO-263AB)
6680
全新原裝優(yōu)勢
 詢價
VISHAY
17+
TO-263
6200
100%原裝正品現(xiàn)貨
 詢價
Vishay
24+
NA
3000
進口原裝正品優(yōu)勢供應(yīng)
 詢價
VISHAY
25+23+
TO-263
33166
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
VISHAY
18+
TO-263
85600
保證進口原裝可開17%增值稅發(fā)票
 詢價
VISHAY
1822+
TO-263
6852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
ASI
24+
105
現(xiàn)貨供應(yīng)
 詢價
VISHAY/威世通
24+
TO-263
65300
一級代理/放心購買!
 詢價
VIS
23+
TO-263
30000
全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
更多UHB供應(yīng)商 更新時間2025-4-16 11:04:00

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