首頁 >UCC27200DRMR>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
UCC27200DRMR | 120-V Boot, 3-A Peak, High Frequency, High-Side/Low-Side Driver | TITexas Instruments 德州儀器美國德州儀器公司 | TI | |
UCC27200DRMR | 120V Boot, 3A Peak, High Frequency, High-Side and Low-Side Driver | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | |
UCC27200DRMR | 包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:8-VDFN 裸露焊盤 類別:集成電路(IC) 柵極驅(qū)動器 描述:IC GATE DRVR HALF-BRIDGE 8VSON | TITexas Instruments 德州儀器美國德州儀器公司 | TI | |
SINGLECELLLi-IonANDLi-PolBATTERYGASGAUGEICFORPORTABLEAPPLICATIONS(bqJUNIOR) | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
SINGLECELLLi-IonANDLi-PolBATTERYGASGAUGEICFORPORTABLEAPPLICATIONS(bqJUNIOR) | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
SINGLECELLLi-IonANDLi-PolBATTERYGASGAUGEICFORPORTABLEAPPLICATIONS(bqJUNIOR) | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
SINGLECELLLi-IonANDLi-PolBATTERYGASGAUGEICFORPORTABLEAPPLICATIONS(bqJUNIOR) | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
SINGLECELLLi-IonANDLi-PolBATTERYGASGAUGEICFORPORTABLEAPPLICATIONS(bqJUNIOR) | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
SINGLECELLLi-IonANDLi-PolBATTERYGASGAUGEICFORPORTABLEAPPLICATIONS(bqJUNIOR) | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
2.0ASUPER-FASTGLASSBODYRECTIFIER Features ?HermeticallySealedGlassBodyConstruction ?ControlledAvalancheCharacteristics ?Super-FastSwitchingforHighEfficiency ?HighCurrentCapabilityandLowForwardVoltageDrop ?SurgeOverloadRatingto50APeak ?LowReverseLeakageCurrent | DIODES Diodes Incorporated | DIODES | ||
200W,2500-2700MHz,GaNHEMTforLTE | CreeCree, Inc 科銳科銳半導(dǎo)體制造商 | Cree | ||
200W,2500-2700MHz,GaNHEMTforLTE | CreeCree, Inc 科銳科銳半導(dǎo)體制造商 | Cree | ||
200W,2500-2700MHz,GaNHEMTforLTE | CreeCree, Inc 科銳科銳半導(dǎo)體制造商 | Cree | ||
200W,2500-2700MHz,GaNHEMTforLTE | CreeCree, Inc 科銳科銳半導(dǎo)體制造商 | Cree | ||
200W,2500-2700MHz,GaNHEMTforLTE | CreeCree, Inc 科銳科銳半導(dǎo)體制造商 | Cree | ||
CtoKaBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FETCHIP DESCRIPTION NE32500andNE27200areHeteroJunctionFETchipthatutilizestheheterojunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreatehighmobilityelectrons.Itsexcellentlownoiseandhighassociatedgainmakeitsuitableforcommercialsystems,industrialandspaceapplications. | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
HETEROJUNCTIONFIELDEFFECTTRANSISTOR DESCRIPTION NE32500andNE27200areHeteroJunctionFETchipthatutilizestheheterojunctionbetweenSi-dopedAlGaAs andundopedInGaAstocreatehighmobilityelectrons.Itsexcellentlownoiseandhighassociatedgainmakeitsuitable forcommercialsystems,industrialandspaceapplication | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DATABUSINTERFACETRANSFORMERSLOWPROFILESINGLE/DUAL | PMI Premier Magnetics, Inc. | PMI | ||
120VBoot,3APeak,HighFrequency,High-SideandLow-SideDriver | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
120-VBoot,3-APeak,HighFrequency,High-Side/Low-SideDriver | TITexas Instruments 德州儀器美國德州儀器公司 | TI |
產(chǎn)品屬性
- 產(chǎn)品編號:
UCC27200DRMR
- 制造商:
Texas Instruments
- 類別:
集成電路(IC) > 柵極驅(qū)動器
- 包裝:
卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶
- 驅(qū)動配置:
半橋
- 通道類型:
獨(dú)立式
- 柵極類型:
N 溝道 MOSFET
- 電壓 - 供電:
8V ~ 17V
- 邏輯電壓?- VIL,VIH:
3V,8V
- 電流 - 峰值輸出(灌入,拉出):
3A,3A
- 輸入類型:
非反相
- 上升/下降時間(典型值):
8ns,7ns
- 工作溫度:
-40°C ~ 140°C(TJ)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
8-VDFN 裸露焊盤
- 供應(yīng)商器件封裝:
8-VSON(4x4)
- 描述:
IC GATE DRVR HALF-BRIDGE 8VSON
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
TI |
2020+ |
QFN8 |
8000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
TI/德州儀器 |
20+ |
SON8 |
7922 |
全新原裝現(xiàn)貨,特價出售 |
詢價 | ||
Texas Instruments |
24+ |
VSON-8 |
12000 |
原裝正品現(xiàn)貨詢價有驚喜 |
詢價 | ||
TI(德州儀器) |
2022+原裝正品 |
VSON-8(4x4) |
18000 |
支持工廠BOM表配單 公司只做原裝正品貨 |
詢價 | ||
TI(德州儀器) |
23+ |
VSON-8(4x4) |
3022 |
深耕行業(yè)12年,可提供技術(shù)支持。 |
詢價 | ||
TI |
2024 |
SON8 |
58209 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力高端行業(yè)供應(yīng)商 |
詢價 | ||
TI |
11+ |
QFN |
8000 |
全新原裝,絕對正品現(xiàn)貨供應(yīng) |
詢價 | ||
TI |
2022 |
8-SON |
25 |
原廠原裝正品,價格超越代理 |
詢價 | ||
TI/TEXAS |
23+ |
原廠封裝 |
8931 |
詢價 | |||
TI |
2020+ |
QFN |
2029 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 |
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