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TZ1188B

Crystal Unit SMD 2.0x1.6 38.4MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.0mmx1.6mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

1188H

20WAUDIOPOWERAMPLIFIER

description TheμPC1188HismonolithicintegratedcircuitandapoweramplifierdesignedforHi-Fiaudiosetsandina10pinSingleIn-Lineplasticpackage.μPC1188Hcanprovide20W(TYP.)to8ohmsat1T.H.D.and±22VSupplyvoltage. FEATURES ●Highoutputpower. 20WTYP.(VCC=±22

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

1188QA

OpticalSplitter

EMCORE

Emcore Corporation

CAP1188

8ChannelCapacitiveTouchSensorwith8LEDDrivers

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

CEB1188

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB1188SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED1188SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 800V,6.8A,RDS(ON)=0.72W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF1188

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF1188SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP1188

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP1188SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU1188SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 800V,6.8A,RDS(ON)=0.72W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CXG1188UR

HighPowerDPDTSwitchwithLogicControl

SonySony Corporation

索尼

DEI1188

8CHGND/OPENDISCRETEINTERFACEICW/EXTHVPROTECTION

DEIAZ

Device Engineering Incorporated

DEI1188-SES

8CHGND/OPENDISCRETEINTERFACEICW/EXTHVPROTECTION

DEIAZ

Device Engineering Incorporated

DEI1188-SMS

8CHGND/OPENDISCRETEINTERFACEICW/EXTHVPROTECTION

DEIAZ

Device Engineering Incorporated

EMC1188

NotebookComputers

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

EMC1188

NotebookComputers

SMSC

Standard Microsystems Corporation

ENA1188

CMOSIC128K/96K-byteROMand12288-byteRAMintegrated8-bit1-chipMicrocontrollerwithUSB-hostcontroller

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

FTB1188

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES ●LowVCE(sat). ●ComplementstheFTD1766

FS

First Silicon Co., Ltd

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
TST
23+
-
30000
華南總代
詢價(jià)
TOSHIBA
1822+
BGA
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
詢價(jià)
TOSHIBA
23+
BGA
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
TOSHIBA/東芝
23+
BGA
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
TOSHIBA/東芝
18+
UFBGA-210
13000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
TOSHIBA/東芝
22+
BGA
18000
原裝正品
詢價(jià)
TOSHIBA/東芝
2023+
BGA
7747
專注全新正品,優(yōu)勢(shì)現(xiàn)貨供應(yīng)
詢價(jià)
TOSHIBA
23+
BGA
10247
原廠原裝正品
詢價(jià)
TOSHIBA
BGA
12000
原裝現(xiàn)貨,長(zhǎng)期供應(yīng),終端賬期支持
詢價(jià)
TOSHIBA
BGA
6000
原裝現(xiàn)貨,長(zhǎng)期供應(yīng),終端可賬期
詢價(jià)
更多TZ1188B供應(yīng)商 更新時(shí)間2024-12-23 9:18:00