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TW015Z120C中文資料東芝數(shù)據(jù)手冊PDF規(guī)格書
TW015Z120C規(guī)格書詳情
Applications
? Switching Voltage Regulators
Features
(1) Chip design of 3rd generation (Built-in SiC schottky barrier diode)
(2) Low diode forward voltage: VDSF = -1.35 V (typ.)
(3) High voltage: VDSS = 1200 V
(4) Low drain-source on-resistance: RDS(ON) = 15 mΩ (typ.)
(5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 11.7
mA)
(6) Recommended gate - source drive voltage: VGS_on = 18 V, VGS_off = 0 V
(7) Enhancement mode.
