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UN1210-XXXH

MULTILAYERCHIPVARISTORS

Feature VaristorVoltagefrom12Vto470V Fastresponsetime Lowleakagecurrent Highsurgecurrentability Bidirectionalclamping,highenergy WideOperatingtemperaturerangefrom-55℃-125℃ SuitableforESDprotection

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

UNR1210

SiliconNPNepitaxialplanertransistor

SiliconNPNepitaxialplanertransistor Forswitching/digitalcircuits ■Features ●Twoelementsincorporatedintoonepackage. (Transistorswithbuilt-inresistor) ●Reductionofthemountingareaandassemblycostbyonehalf. ■BasicPartNumberofElement ●UNR1210(UN1210)×2elemen

PanasonicPanasonic Semiconductor

松下松下電器

UNR1210

SiliconNPNepitaxialplanartype

SiliconNPNepitaxialplanartype Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts ?Mtypepackageallowingeasyautomaticandmanualinsertionas wellasstand-alonefixingtotheprintedcircuitboard

PanasonicPanasonic Semiconductor

松下松下電器

URF1210

SwitchmodeFullPlasticDualUltrafastPowerRectifiers

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

VB1210

N-Channel20V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?GenIIIPowerMOSFET ?100RgTested ?100UISTested ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

VBA1210

N-Channel20V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

VBA1210

N-Channel20V(D-S)MOSFET

FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?OptimizedforHigh-SideSynchronous RectifierOperation ?100RgTested ?100UISTested APPLICATIONS ?NotebookCPUCore -High-SideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

VDA1210CTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VDA1210NTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司

VJ1210

MultilayerCeramicChipCapacitors

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    TVS1210SMD

  • 制造商：

    DBLECTRO

  • 制造商全稱：

    DB Lectro Inc

  • 功能描述：

    VARISTORS(Multilayer Ceramic Transient Voltage Suppressor Standard Capacity)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
CHENMKO
24+
SOT23
98000
原裝現(xiàn)貨假一罰十
 詢價(jià)
CHENMKO
20+
SOT-23
36800
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
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24+
SOT-23
85000
原裝現(xiàn)貨假一賠十
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chenmko
2015+
SOT23
995300
原裝現(xiàn)貨價(jià)格優(yōu)勢(shì)-含16%增值稅
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CHENMKO
23+
SOT23
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
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TI德州儀器
22+
24000
原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu)
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TI(德州儀器)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
 詢價(jià)
TI(德州儀器)
24+/25+
10000
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
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TI
23+
WSON-6
50000
全新原裝正品現(xiàn)貨,支持訂貨
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TI(德州儀器)
2021+
8000
原裝現(xiàn)貨，歡迎詢價(jià)
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更多TVS1210SMD供應(yīng)商 更新時(shí)間2025-6-25 16:13:00

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