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TTA

Axial lead - High voltage

ILLINOISCAPACITORIllinois Capacitor, Inc.

伊利諾斯伊利諾斯電容器股份有限公司

TTA0001

Transistor Silicon PNP Triple Diffused Type

○PowerAmplifierApplications ?Highcollectorvoltage:VCEO=-160V(min.) ?ComplementarytoTTC0001 ?Recommendedfor100-Whigh-fidelityaudiofrequencyamplifieroutputstage.

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TTA0001

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TTA0002

Transistor Silicon PNP Triple Diffused Type

○PowerAmplifierApplications ?Highcollectorvoltage:VCEO=-160V(min) ?ComplementarytoTTC0002 ?Recommendedfor100-Whigh-fidelityaudiofrequencyamplifieroutput stage.

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TTA0002

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TTA003

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TTA004

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TTA005

Bipolar Transistors Silicon PNP Epitaxial Type

Applications ?High-SpeedSwitching ?DC-DCConverters Features (1)HighDCcurrentgain:hFE=200to500(IC=-0.5A) (2)Lowcollector-emittersaturationvoltage:VCE(sat)=-0.27V(max)(IC=-1.6A,IB=-53mA) (3)High-speedswitching:tf=55ns(typ.)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TTA006B

Bipolar Transistors Silicon PNP Epitaxial Type

Applications ?PowerAmplifiers ?Audio-FrequencyAmplifiers Features (1)Highcollectorvoltage:VCEO=230V(min) (2)Smallcollectoroutputcapacitance:Cob=30pF(typ.) (3)Hightransitionfrequency:fT=70MHz(typ.) (4)ComplementarytoTTC011B

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TTA007

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TTA008B

Bipolar Transistors Silicon PNP Epitaxial Type

Applications ?PowerAmplifiers ?PowerSwitching Features (1)HighDCcurrentgain:hFE=100to200(IC=-0.5A) (2)Lowcollectoremittersaturationvoltage:VCE(sat)=-0.5V(max)(IC=-1A) (3)High-speedswitching:tstg=300ns(typ.)(IC=-1A) (4)ComplementarytoTTC015B

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TTA009

Bipolar Transistors Silicon PNP Epitaxial Type

Applications ?PowerAmplifiers ?PowerSwitching Features (1)Lowcollectorsaturationvoltage:VCE(sat)=-0.5V(max)(IC=-1A,IB=-100mA) (2)High-speedswitching:tstg=300ns(typ.)(IC=-1A)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TTA010

Bipolar Transistors Silicon PNP Triple-Diffused Type

Applications ?High-VoltageSwitching Features (1)Highcollectorvoltage:VCEO=-500V(min) (2)HighDCcurrentgain:hFE=100to300(VCE=-10V,IC=-20mA) (3)Lowcollector-emittersaturationvoltage:VCE(sat)=-0.3V(max)(IC=-20mA,IB=-2mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TTA011

Bipolar Transistors Silicon PNP Epitaxial Type

Applications ?High-SpeedSwitching ?DC-DCConverters Features (1)HighDCcurrentgain:hFE=200to500(VCE=-2V,IC=-0.5A) (2)Lowcollector-emittersaturationvoltage:VCE(sat)=-0.27V(max)(IC=-1.6A,IB=-53mA) (3)High-speedswitching:tf=60ns(typ.)(IC=-1.6A)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TTA012

Bipolar Transistors Silicon PNP Epitaxial Type

Applications ?High-SpeedSwitching ?DC-DCConverters Features (1)HighDCcurrentgain:hFE=100to200(VCE=-2V,IC=-0.4A) (2)Lowcollector-emittersaturationvoltage:VCE(sat)=-0.22V(max)(IC=-1.2A,IB=-0.12A) (3)High-speedswitching:tf=35ns(typ.)(IC=-1.2A)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TTA013

Bipolar Transistors Silicon PNP Epitaxial Type

Applications ?High-SpeedSwitching ?DC-DCConverters Features (1)HighDCcurrentgain:hFE=120to240(VCE=-2V,IC=-0.25A) (2)Lowcollector-emittersaturationvoltage:VCE(sat)=-0.32V(max)(IC=-0.75A,IB=-75mA) (3)High-speedswitching:tf=65ns(typ.)(IC=-0.75A

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TTA1452B

Bipolar Transistors Silicon PNP Epitaxial Type

Applications ?High-CurrentSwitching Features (1)Lowcollector-emittersaturationvoltage:VCE(sat)=-0.4V(max)(IC=-6A,IB=-0.3A) (2)Highspeedswitching:tstg=1μs(typ.) (3)ComplementarytoTTC3710B

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TTA145N08A

85V N-Channel Trench MOSFET(Preliminary)

GeneralDescription ●TrenchPowertechnology ●LowRDS(ON) ●LowGateCharge ●Optimizedforfast-switchingapplications Applications ●SynchronousRectificationinDC/DCandAC/DCConverters ●IsolatedDC/DCConvertersin

WUMCWuxi Unigroup Microelectronics Company

紫光國微紫光國芯微電子股份有限公司

TTA145N08A

85V N-Channel Trench MOSFET(Preliminary)

GeneralDescription ●TrenchPowertechnology ●LowRDS(ON) ●LowGateCharge ●Optimizedforfast-switchingapplications Applications ●SynchronousRectificationinDC/DCandAC/DCConverters ●IsolatedDC/DCConvertersinTelecomandIndustrial

WUMCWuxi Unigroup Microelectronics Company

紫光國微紫光國芯微電子股份有限公司

TTA145N08A

85V N-Channel Trench MOSFET(Preliminary)

GeneralDescription ●TrenchPowertechnology ●LowRDS(ON) ●LowGateCharge ●Optimizedforfast-switchingapplications Applications ●SynchronousRectificationinDC/DCandAC/DCConverters ●IsolatedDC/DCConvertersinTelecomandIndustria

WUMCWuxi Unigroup Microelectronics Company

紫光國微紫光國芯微電子股份有限公司

詳細(xì)參數(shù)

  • 型號:

    TTA

  • 制造商:

    TOSHIBA

  • 制造商全稱:

    Toshiba Semiconductor

  • 功能描述:

    Transistor Silicon PNP Triple Diffused Type

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
24+
2500
自己現(xiàn)貨
詢價(jià)
TOSHIBA
11+
TO-3P
8000
全新原裝,絕對正品現(xiàn)貨供應(yīng)
詢價(jià)
TOSHIBA
2016+
TO-3PL
3000
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
詢價(jià)
TOSHIBA
24+
原廠封裝
4800
全新原裝
詢價(jià)
TOSHIBA
17+
UNKNOWN
1000
保證原裝正品!優(yōu)勢渠道供應(yīng),可訂貨
詢價(jià)
24+
SOP
2700
全新原裝自家現(xiàn)貨優(yōu)勢!
詢價(jià)
TOSHIBA
22+23+
TO-3PL
50469
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
詢價(jià)
TOSHIBA
18+
TO-3PL
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
詢價(jià)
TOSHIBA
1844+
SOT-23
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
詢價(jià)
TOSHIBA
16
TO-3P
6000
絕對原裝自己現(xiàn)貨
詢價(jià)
更多TTA供應(yīng)商 更新時(shí)間2025-1-4 16:00:00