TSM1N60CP中文資料臺灣半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
TSM1N60CP規(guī)格書詳情
VDS= 600V
ID= 1A
RDS (on), Vgs @ 10V, Ids @ 0.6A = 8?
General Description
The TSM1N60 is used an advanced termination scheme toprovide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
Features
Robust high voltage termination
Avalanche energy specified
Diode is characterized for use in bridge circuits
Source to Drain diode recovery time comparable to a discrete fast recovery diode.
IDSSand VDS(on)specified at elevated temperature
產(chǎn)品屬性
- 型號：
TSM1N60CP
- 制造商：
Taiwan Semiconductor
- 功能描述：
MOSFET N 600V D-PAK
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
TSC/臺灣半導(dǎo)體 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
TSC |
21+ |
TO-252 |
9999 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
TAIWAN SEMONDUCTOR |
23+ |
NA/ |
13282 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價 | ||
TS |
2018+ |
TO252 |
6528 |
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心 |
詢價 | ||
taiwansemi |
24+ |
TO-251 |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
vishay |
2023+ |
TO-251 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
TOSHIBA |
22+ |
TO-251 |
3000 |
原裝正品,支持實單 |
詢價 | ||
TSC |
23+ |
TO-252 |
12500 |
原廠原裝正品 |
詢價 | ||
TSC/臺灣半導(dǎo)體 |
22+ |
SOT-252 |
20000 |
保證原裝正品,假一陪十 |
詢價 | ||
TSC |
24+ |
TO251 |
11000 |
原裝正品現(xiàn)貨 低價出售 假一賠十 |
詢價 |
