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FQL40N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQL40N50

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQL40N50F

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQL40N50F

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.11Ω(Max)@VGS=10V APPLICATIONS ·SwitchedModePowerSupplies ·FPC ·ElectronicLampBallasts

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFPS40N50L

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFPS40N50L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFPS40N50L

PowerMOSFET(Vdss=500V,Rds(on)typ.=0.087ohm,Id=46A)

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dt Ruggedness ●FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ●LowTrrandSoftDiodeRecovery ●HighPerformanceOptimisedAnti-parallelDiode Applications

IRF

International Rectifier

IRFPS40N50L

PowerMOSFET

FEATURES ?SuperfastBodyDiodeEliminatestheNeedfor ??ExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDrive ??Requirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoise ??Immunity ?Compliant

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFPS40N50LPBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRFPS40N50LPBF

PowerMOSFET

FEATURES ?SuperfastBodyDiodeEliminatestheNeedfor ??ExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDrive ??Requirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoise ??Immunity ?Compliant

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

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23+
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100
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11+
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8000
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場(chǎng)效應(yīng)
23+
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3562
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900
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600
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更多TSG40N50DV供應(yīng)商 更新時(shí)間2025-1-26 9:20:00