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61010

PHOTODARLINGTON??IGTAIL?

DESCRIPTION The61010isanN-P-NPlanarSiliconPhotodarlingtonTransistorinapackagedesignedtobemountedinasingle-cladprintedcircuitboard.Itslargeeffectiveapertureandnarrowangularresponsemakethisahighlysensitivedevicewithminimumresponsetooff-axisorstraylight.Th

MICROPAC

micropac industries inc

MP61010

GaAsPINDIODES

MicrosemiMicrosemi Corporation

美高森美美高森美公司

PHPT61010NY

100V,10ANPNhighpowerbipolartransistor

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PHPT61010NY

100V,10ANPNhighpowerbipolartransistor

1.Generaldescription NPNhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-Mounted Device(SMD)powerplasticpackage. PNPcomplement:PHPT61010PY 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Hightemperatureapplicationsupto175°C ?ReducedPrinted

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PHPT61010NY-Q

100V,10ANPNhighpowerbipolartransistor

1.Generaldescription NPNhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. PNPcomplement:PHPT61010PY-Q 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Hightemperatureapplicationsupto175°C ?ReducedPrin

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PHPT61010NYX

100V,10ANPNhighpowerbipolartransistor

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PHPT61010PY

100V,10APNPhighpowerbipolartransistor

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PHPT61010PY

100V,10APNPhighpowerbipolartransistor

1.Generaldescription PNPhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice (SMD)powerplasticpackage. NPNcomplement:PHPT61010NY. 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Suitableforhightemperatureapplicationsupto175°C ?Re

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PHPT61010PY-Q

100V,10APNPhighpowerbipolartransistor

1.Generaldescription PNPhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. NPNcomplement:PHPT61010NY-Q 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Suitableforhightemperatureapplicationsupto175°C ?

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

T-61010

LowProfileInternationalSeriesPowerTransformer

RHOMBUS-IND

Rhombus Industries Inc.

詳細參數(shù)

  • 型號：

    TPS61010DRCT

  • 制造商：

    Texas Instruments

  • 功能描述：

    CONV DC-DC SGL-OUT STEP UP 10PIN SON EP - Tape and Reel

供應商型號品牌批號封裝庫存備注價格
TI/德州儀器
23+
QFN-10
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
TI/TEXAS
23+
原廠封裝
8931
詢價
TI
23+
—
7750
全新原裝優(yōu)勢
 詢價
TI
24+
NOPKG
6000
進口原裝正品假一賠十,貨期7-10天
 詢價
TI
1844+
LQFP
9852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
22+
NA
3450
加我QQ或微信咨詢更多詳細信息,
 詢價
TI/德州儀器
23+
8355
只做原裝現(xiàn)貨/實單可談/支持含稅拆樣
 詢價
24+
MSOP-10
10
詢價
TexasInstruments
18+
ICREGBSTSYNC1.5V0.2A10MS
7500
公司原裝現(xiàn)貨/歡迎來電咨詢!
 詢價
TexasInstruments
24+
10-VSSOP
66800
原廠授權一級代理,專注汽車、醫(yī)療、工業(yè)、新能源！
 詢價
更多TPS61010DRCT供應商 更新時間2025-3-26 16:04:00

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