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TPC8106-H

SILICON P CHANNEL MOS TYPE

HighSpeedandHighEfficiencyDC?DCConverters LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications Smallfootprintduetosmallandthinpackage Highspeedswitching Smallgatecharge:Qg=52nC(typ.) Lowdrain?sourceONresista

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCA8106

FieldEffectTransistorSiliconPChannelMOSType(U-MOS??

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetosmallandthinpackage ?Lowdrain-sourceON-resistance:RDS(ON)=2.9m?(typ.) (VG

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCA8106

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCC8106

MOSFETsSiliconP-ChannelMOS(U-MOS)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCP8106

Lithium-IonSecondaryBatteriesPowerManagementSwitchesNotebookPCs

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TQ8106

SONET/SDHTransceivers

TheTQ8105/TQ8106areSONET/SDHtransceiversthatintegratemultiplexing,demultiplexing,SONET/SDHframing,clock-synthesisPLL,andenhancedlineandclockdiagnosticfunctionsintoasinglemonolithicdevice.TheTQ8106isapin-compatibleupgradeoftheTQ8105thatincludesaClockandDataRe

TriQuint

TriQuint Semiconductor

UPC8106

SILICONMMIC2.0GHzFREQUENCYUP-CONVERTERFORCELLULAR/CORDLESSTELEPHONES

DESCRIPTION TheμPC8106TBandμPC8109TBaresiliconmonolithicintegratedcircuitdesignedasfrequencyup-converterforcellular/cordlesstelephonetransmitterstage.TheμPC8106TBfeaturesimprovedintermodulationandμPC8109TBfeatureslowcurrentconsumption.Fromthesetwoversion,youcanc

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPC8106T

3V,SILICONMMICFREQUENCYUP-CONVERTER

DESCRIPTION TheUPC8106TandUPC8109TareL-BandFrequencyUpConvertersmanufacturedusingtheNESATIIIMMICprocess.TheUPC8106TwasdesignedforlowdistortionwhiletheUPC8109Twasdesignedforlowcurrentconsumption.Operationfroma3voltsupplyvoltagemakesthisdeviceidealforhandh

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPC8106T

3V,SILICONMMICFREQUENCYUP-CONVERTER

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPC8106TB

SILICONMMIC2.0GHzFREQUENCYUP-CONVERTERFORCELLULAR/CORDLESSTELEPHONES

DESCRIPTION TheμPC8106TBandμPC8109TBaresiliconmonolithicintegratedcircuitdesignedasfrequencyup-converterforcellular/cordlesstelephonetransmitterstage.TheμPC8106TBfeaturesimprovedintermodulationandμPC8109TBfeatureslowcurrentconsumption.Fromthesetwoversion,youcanc

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPC8106TB

SILICONMMIC2.0GHzFREQUENCYUP-CONVERTERFORCELLULARTELEPHONE

DESCRIPTION TheμPC8163TBisasiliconmonolithicintegratedcircuitdesignedasfrequencyup-converterforcellulartelephonetransmitterstage.TheμPC8163TBhasimprovedintermodulationperformanceandsmallerpackage. TheμPC8163TBismanufacturedusingNEC’s20GHzfTNESATTMlllsiliconbip

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPC8106TB

SILICONMMIC2.5GHzFREQUENCYUP-CONVERTERFORWIRELESSTRANSCEIVER

DESCRIPTION TheμPC8172TBisasiliconmonolithicintegratedcircuitdesignedasfrequencyup-converterforwirelesstransceivertransmitterstage.ThisICismanufacturedusingNEC’s30GHzfmax.UHS0(UltraHighSpeedProcess)siliconbipolarprocess. ThisICisassamecircuitcurrentasconv

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPC8106TB

SILICONRFICHI-IP3FREQUENCYUP-CONVERTERFORWIRELESSTRANSCEIVER

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPC8106TB

3VSILICONRFICFREQUENCYUPCONVERTER

CEL

California Eastern Labs

UPC8106TB

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Highoutputfrequency:fRFout=0.8to2.5GHz ?High-densitysurfacemounting:6-pinsuperminimoldpackage ?Supplyvoltage:VCC=2.7to3.3V ?HigherIP3:OIP3=+10dBm@fRFout=1.9GHz

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC8106TB

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES ?Recommendedoperatingfrequency:fRFout=0.4to2.0GHz,fIFin=100to400MHz ?Supplyvoltage:VCC=2.7to5.5V ?High-densitysurfacemounting:6-pinsuperminimoldpackage ?Lowcurrentconsumption:ICC=9mATYP.@mPC8106TB ICC=5mATYP.@mPC8109TB ?Minimizedca

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

VCMB_8106-RC

CommonModeChoke

ALLIED

Allied Components International

VCMB8106-RC

CommonModeChokewithBase

ALLIED

Allied Components International

VCMB8106-RC

CommonModeChokewithBase

ALLIED

Allied Components International

XF8106HV-HPCMC

InductanceRange

XFMRS

XFMRS,Inc.

詳細(xì)參數(shù)

  • 型號(hào):

    TPC8106-H

  • 制造商:

    TOSHIBA

  • 制造商全稱:

    Toshiba Semiconductor

  • 功能描述:

    SILICON P CHANNEL MOS TYPE

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24+
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1918
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Bychip
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10000
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8000
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TOSHIBA
17+
SOP-8
6200
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TOSHIBA
23+
SOIC-8
35623
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T0SHIBA
2016+
SOP8
6528
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
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TOSHIBA
2020+
SOP8
2660
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TOSHIBA
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SOP8
8800
進(jìn)口原裝大量現(xiàn)貨熱賣中
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TOS
16+
SOP-8
10000
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
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2000
SOP-8P
1270
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更多TPC8106-H供應(yīng)商 更新時(shí)間2025-1-10 13:30:00