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FDA20N50F

N-ChannelMOSFET500V,22A,0.26廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDA20N50F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.26Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FDB20N50F

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDB20N50F

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FDP20N50

500VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP20N50

500VN-ChannelMOSFET

Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP20N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.24Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FDP20N50F

N-ChannelMOSFET,FRFET500V,20A,0.26廓

Description UniFET?MOSFETisFairchildSemiconductor?’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thebodydiode’sreverserecov

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP20N50F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.26Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FDP20N50T

PFCPWMCombinationController

Introduction Thisapplicationnotedescribesstep-by-stepdesignconsiderationsforapowersupplyusingtheFAN480Xcontroller.TheFAN480XcombinesaPFCcontrollerandaPWMcontroller.ThePFCcontrolleremploysaveragecurrentmodecontrolforContinuousConductionMode(CCM)boostconverter

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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940
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更多TMPF20N50G供應(yīng)商 更新時(shí)間2025-3-26 15:00:00

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