首頁(yè) >TMK-IH1720>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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CrystalUnitSMD2.0x1.631.875MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.0mmx1.6mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
9000SERIES-MNIATUREMOMENTARYPUSHBUTTONSWTCHES | etc2List of Unclassifed Manufacturers etc未分類(lèi)制造商etc2未分類(lèi)制造商 | etc2 | ||
Compact,2-pinmini-moldtypeforhigh-densitymounting.(UMD2) | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ?LowOn-Resistance RDS(on)1=25.0mΩMAX.(VGS=10V,ID=4.0A) RDS(on)2=33.0mΩMAX.(VGS=4.5V,ID=4.0A) RDS(on)3=38.0mΩMAX.(VGS=4.0V,ID=4.0A) ?LowCiss:Ciss=800pFTYP. ?Built-inG-SProtectionDi | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION TheμPA1720isN-ChannelMOSFieldEffectTransistordesignedforDC/DCConvertersandpowermanagementapplicationofnotebookcomputers. FEATURES ?LowOn-Resistance RDS(on)1=25.0m?MAX.(VGS=10V,ID=4.0A) RDS(on)2=33.0m?MAX.(VGS=4.5V,ID=4.0A) | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION TheμPA1720isN-ChannelMOSFieldEffectTransistordesignedforDC/DCConvertersandpowermanagementapplicationofnotebookcomputers. FEATURES ?LowOn-Resistance RDS(on)1=25.0m?MAX.(VGS=10V,ID=4.0A) RDS(on)2=33.0m?MAX.(VGS=4.5V,ID=4.0A) | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ?LowOn-Resistance RDS(on)1=25.0mΩMAX.(VGS=10V,ID=4.0A) RDS(on)2=33.0mΩMAX.(VGS=4.5V,ID=4.0A) RDS(on)3=38.0mΩMAX.(VGS=4.0V,ID=4.0A) ?LowCiss:Ciss=800pFTYP. ?Built-inG-SProtectionDi | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein | ANASEMAnaSem Hong Kong Limited. 安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司 | ANASEM | ||
Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein | ANASEMAnaSem Hong Kong Limited. 安納森半導(dǎo)體安納森半導(dǎo)體香港有限公司 | ANASEM | ||
HallEffectBaseLinearCurrentSensor | WinsonWinson Semiconductor Corp. 育升半導(dǎo)體育升半導(dǎo)體股份有限公司 | Winson |
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