TMC6200

Universal high voltage BLDC/PMSM/Servo MOSFET 3-halfbridge gate-driver with in line motor current sensing.

TMC6200-EVAL

Universal high voltage BLDC/PMSM/Servo MOSFET 3-halfbridge gate-driver with in line motor current sensing.

TMC6200-TA

Universal high voltage BLDC/PMSM/Servo MOSFET 3-halfbridge gate-driver with in line motor current sensing.

TMC6200-TA-T

Universal high voltage BLDC/PMSM/Servo MOSFET 3-halfbridge gate-driver with in line motor current sensing.

TMC6200-EVAL

包裝：盒 功能：電機控制器/驅(qū)動器 類別：開發(fā)板，套件，編程器 評估和演示板及套件 描述：EVAL BOARD FOR TMC6200

TMC6200-EVAL-KIT

包裝：盒 功能：電機控制器/驅(qū)動器 類別：開發(fā)板，套件，編程器 評估和演示板及套件 描述：EVAL KIT FOR TMC6200

TMC6200-TA

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：48-TQFP 裸露焊盤 類別：集成電路（IC） 柵極驅(qū)動器 描述：IC GATE DRVR HALF-BRIDGE 48TQFP

TSAL6200

HighPowerInfraredEmittingDiode,RoHSCompliant,940nm,GaAlAs/GaAs

TSAL6200

HighPowerInfraredEmittingDiode,940nm,GaAlAs/GaAs

TSAL6200

GaAs/GaAlAsIREmittingDiodein?5mm(T-13/4)Package

DESCRIPTION TSAL6200isaninfrared,940nmemittingdiodeinGaAlAsmultiquantumwell(MQW)technologywithhighradiantpowerandhighspeedmoldedinablue-grayplasticpackage. FEATURES ?Packagetype:leaded ?Packageform:T-1? ?Dimensions(inmm):?5 ?Peakwavelength:λp=940nm

TSAL6200

HighPowerInfraredEmittingDiode

TSAL6200

HighPowerInfraredEmittingDiode,940nm,GaAlAs,MQW

TSAL6200

HighPowerInfraredEmittingDiode,940nm,GaAlAs,MQW

DESCRIPTION TSAL6200isaninfrared,940nmemittingdiodeinGaAlAs multiquantumwell(MQW)technologywithhighradiant powerandhighspeedmoldedinablue-grayplastic package. FEATURES ?Packagetype:leaded ?Packageform:T-1? ?Dimensions(inmm):?5 ?Peakwavelength:λp=9

TSHA6200

InfraredEmittingDiode,875nm,GaAlAs

DESCRIPTION TheTSHA620.seriesareinfrared,875nmemittingdiodesin GaAlAstechnology,moldedinaclear,untintedplastic package. FEATURES ?Packagetype:leaded ?Packageform:T-1? ?Dimensions(inmm):?5 ?Peakwavelength:λp=875nm ?Highreliability ?Angleofhalfinten

TSHA6200

InfraredEmittingDiode,875nm,GaAlAs

TSHA6200

InfraredEmittingDiode

DESCRIPTION TheTSHA620.seriesareinfrared,875nmemittingdiodesinGaAlAstechnology,moldedinaclear,untintedplasticpackage. FEATURES ?Packagetype:leaded ?Packageform:T-1? ?Dimensions(inmm):?5 ?Peakwavelength:λp=875nm ?Highreliability ?Angleofhalfintensity

TSHA6200

InfraredEmittingDiode,875nm,GaAlAs

TSHA6200

InfraredEmittingDiode,RoHSCompliant,875nm,GaAlAs

TSHA6200

InfraredEmittingDiode,875nm,GaAlAs

TSHA6200

GaAlAsInfraredEmittingDiodesin?5mm(T–13/4)Package