TLP705中文資料東芝數(shù)據(jù)手冊PDF規(guī)格書

Plasma Display Panel

Industrial Inverter

IGBT/Power MOS FET Gate Drive

TLP705 consists of a GaA?As light emitting diode and an integrated photodetector. This unit is 6-lead SDIP package. TLP705 is 50 smaller than 8pin DIP and has suited the safety standard reinforced insulation class.

So mounting area in safety standard required equipment can be reduced.

TLP705 is suitable for gate driving circuit of IGBT or power MOS FET.

Especially TLP705 is capable of “direct” gate drive of lower Power IGBTs.

? Peak output current : ±0.45 A (max)

? Operating frequency : 250kHz (max)

? Guaranteed performance over temperature : -40 to 100°C

? Supply current : 3.0mA (max)

? Power supply voltage : 10 to 20 V

? Threshold input current : IFLH = 8 mA (max)

? Switching time (tpLH / tpHL) : 200 ns (max)

? Common mode transient immunity : 10 kV/μs (min)

? Isolation voltage : 5000 Vrms (min)

? Construction Mechanical Rating

Creepage Distance 7.0 mm (min)

Clearance 7.0 mm (min)

Insulation Thickness 0.4 mm (min)

? UL Recognized : UL1577, File No.E67349

? cUL approved : CSA Component Acceptance Service No. 5A, File No.E67349

? Option (D4) VDE approved : EN60747-5-5 (Note 1), EN60065, EN60950-1 EN62368-1(Pending)