首頁 >TK12>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

TK12A60U

Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

SwitchingRegulatorApplications ?Lowdrain-sourceON-resistance:RDS(ON)=0.36?(typ.) ?Highforwardtransferadmittance:?Yfs?=7.0S(typ.) ?Lowleakagecurrent:IDSS=100μA(max)(VDS=600V) ?Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK12A60W

MOSFETs Silicon N-Channel MOS (DTMOS??

Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.265?(typ.)byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.6mA) Applications ?SwitchingVoltageRegulators

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK12A80W

Marking：K12A80W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.38Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3.0to4.0V(VDS=10V,ID=0.57mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK12D60U

Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

SwitchingRegulatorApplications ?Lowdrain-sourceON-resistance:RDS(ON)=0.36?(typ.) ?Highforwardtransferadmittance:?Yfs?=7.0S(typ.) ?Lowleakagecurrent:IDSS=100μA(VDS=600V) ?Enhancementmode:Vth=3.0to5.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK12D60U

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

TK12E60U

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

TK12E60W

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=11.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

TK12E80W

Marking：K12E80W；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.38Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3.0to4.0V(VDS=10V,ID=0.57mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK12E80W

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=11.5A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.45Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

TK12J55D

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

詳細參數(shù)

  • 型號：

    TK12

  • 制造商：

    DYNEX

  • 制造商全稱：

    Dynex Semiconductor

  • 功能描述：

    Phase Control Thyristor

供應(yīng)商型號品牌批號封裝庫存備注價格
TOS
2020+
TO220
40
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
TOSHIBA
24+
TO-220F
5000
只做原裝公司現(xiàn)貨
 詢價
TOSHIBA
19+
TO-220F
20000
只做原裝正品優(yōu)勢供應(yīng)
 詢價
TOS
24+/25+
TO220
3688
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
TOKO
1716+
?
6500
只做原裝進口,假一罰十
 詢價
TOSHIBA
TO-220F
6688
15
現(xiàn)貨庫存
 詢價
TOSHIBA/東芝
23+
TO-220F
8160
原廠原裝
 詢價
TOSHIBA
21+
TO-220F
12588
原裝正品
 詢價
TOS
2018+
26976
代理原裝現(xiàn)貨/特價熱賣!
 詢價
TOSHIBA
22+
TO-3P
3000
原裝正品,支持實單
 詢價
更多TK12供應(yīng)商 更新時間2025-3-28 13:58:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多