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TG-108

HIGH ENERGY SPARK GAP DEVICES

DESCRIPTION CPClare’sTGLegacySeriesoftwoelectrodesparkgapsexcelinapplicationsthatrequiretheefficienttransferofhighvoltage,highenergypulsesandDCovervoltageprotectionformagnetrons,diodes,capacitors,etc.TheTGLegacySeriesalsoincludesthreeelectrodetriggeredsp

Clare

Clare, Inc.

TIC108

SILICONCONTROLLEDRECTIFIERS

SILICONCONTROLLEDRECTIFIERS ●5AContinuousOn-StateCurrent ●20ASurge-Current ●GlassPassivatedWafer ●400Vto800VOff-StateVoltage ●MaxIGTof1mA

POINN

Power Innovations Ltd

TIC108A

P-N-P-NSILICONREVERSE-BLOCKINGTRIODETHYRISTORS

P-N-P-NSILICONREVERSE-BLOCKINGTRIODETHYRISTORS ?5AContinuousOn-StateCurrent ?20ASurge-Current ?GlassPassivatedWafer ?100Vto800VOff-StateVoltage ?MaxIGTof1mA ?CompliancetoROHS

COMSET

Comset Semiconductor

TIC108B

P-N-P-NSILICONREVERSE-BLOCKINGTRIODETHYRISTORS

P-N-P-NSILICONREVERSE-BLOCKINGTRIODETHYRISTORS ?5AContinuousOn-StateCurrent ?20ASurge-Current ?GlassPassivatedWafer ?100Vto800VOff-StateVoltage ?MaxIGTof1mA ?CompliancetoROHS

COMSET

Comset Semiconductor

TIC108C

P-N-P-NSILICONREVERSE-BLOCKINGTRIODETHYRISTORS

P-N-P-NSILICONREVERSE-BLOCKINGTRIODETHYRISTORS ?5AContinuousOn-StateCurrent ?20ASurge-Current ?GlassPassivatedWafer ?100Vto800VOff-StateVoltage ?MaxIGTof1mA ?CompliancetoROHS

COMSET

Comset Semiconductor

TIC108D

SILICONCONTROLLEDRECTIFIERS

SILICONCONTROLLEDRECTIFIERS ●5AContinuousOn-StateCurrent ●20ASurge-Current ●GlassPassivatedWafer ●400Vto800VOff-StateVoltage ●MaxIGTof1mA

POINN

Power Innovations Ltd

TIC108D

P-N-P-NSILICONREVERSE-BLOCKINGTRIODETHYRISTORS

P-N-P-NSILICONREVERSE-BLOCKINGTRIODETHYRISTORS ?5AContinuousOn-StateCurrent ?20ASurge-Current ?GlassPassivatedWafer ?100Vto800VOff-StateVoltage ?MaxIGTof1mA ?CompliancetoROHS

COMSET

Comset Semiconductor

TIC108E

P-N-P-NSILICONREVERSE-BLOCKINGTRIODETHYRISTORS

P-N-P-NSILICONREVERSE-BLOCKINGTRIODETHYRISTORS ?5AContinuousOn-StateCurrent ?20ASurge-Current ?GlassPassivatedWafer ?100Vto800VOff-StateVoltage ?MaxIGTof1mA ?CompliancetoROHS

COMSET

Comset Semiconductor

TIC108M

SILICONCONTROLLEDRECTIFIERS

SILICONCONTROLLEDRECTIFIERS ●5AContinuousOn-StateCurrent ●20ASurge-Current ●GlassPassivatedWafer ●400Vto800VOff-StateVoltage ●MaxIGTof1mA

POINN

Power Innovations Ltd

TIC108M

P-N-P-NSILICONREVERSE-BLOCKINGTRIODETHYRISTORS

P-N-P-NSILICONREVERSE-BLOCKINGTRIODETHYRISTORS ?5AContinuousOn-StateCurrent ?20ASurge-Current ?GlassPassivatedWafer ?100Vto800VOff-StateVoltage ?MaxIGTof1mA ?CompliancetoROHS

COMSET

Comset Semiconductor

詳細(xì)參數(shù)

  • 型號(hào)：

    TG-108

  • 制造商：

    CLARE

  • 制造商全稱：

    Clare, Inc.

  • 功能描述：

    HIGH ENERGY SPARK GAP DEVICES

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更多TG-108供應(yīng)商 更新時(shí)間2025-3-19 9:30:00

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