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TF859

IEC Contactor Specifications

ALLEN-BRADLEY

Allen-Bradley

859

1.3WattsAxialLeadedZenerDiodes

VOLTAGERANGE:2.4-200VPOWER:1.3Watts Features ●CompleteVoltageRange2.4to200Volts ●Highpeakreversepowerdissipation ●Highreliability ●Lowleakagecurrent

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

A-859

Avikrimp??SnapPlug,for18-22AWGWire,Box,24.31mm(.957)Length

MOLEX4Molex Electronics Ltd.

莫仕

A-859T

Avikrimp??SnapPlug,for18-22AWGWire,MylarTape,24.31mm(.957)Length

MOLEX4Molex Electronics Ltd.

莫仕

ADG859

1.3ohmCMOS,1.8Vto5.5VSingleSPDTSwitch/2:1MUXinSOT-66Package

GENERALDESCRIPTION TheADG859isamonolithic,CMOSSPDT(singlepole,doublethrow)switchthatoperateswithasupplyrangeof1.8Vto5.5V.Itisdesignedtoofferlowonresistanceof2.3Ωmaximumovertheentiretemperaturerangeof?40°Cto+125°C.TheADG859alsohasthecapabilityof

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ADG859BRYZ-REEL

1.3ohmCMOS,1.8Vto5.5VSingleSPDTSwitch/2:1MUXinSOT-66Package

GENERALDESCRIPTION TheADG859isamonolithic,CMOSSPDT(singlepole,doublethrow)switchthatoperateswithasupplyrangeof1.8Vto5.5V.Itisdesignedtoofferlowonresistanceof2.3Ωmaximumovertheentiretemperaturerangeof?40°Cto+125°C.TheADG859alsohasthecapabilityof

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ADG859YRYZ-REEL

1.3ohmCMOS,1.8Vto5.5VSingleSPDTSwitch/2:1MUXinSOT-66Package

GENERALDESCRIPTION TheADG859isamonolithic,CMOSSPDT(singlepole,doublethrow)switchthatoperateswithasupplyrangeof1.8Vto5.5V.Itisdesignedtoofferlowonresistanceof2.3Ωmaximumovertheentiretemperaturerangeof?40°Cto+125°C.TheADG859alsohasthecapabilityof

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

ANT-859-DBD-DA/W

Uniquedual-bandconfiguration.

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

ANT859DBDDAW

DUALBANDANTENNAS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

BC859

SOT23NPNSILICONPLANAR

SOT23NPNSILICONPLANARGENERALPURPOSETRANSISTORS

Zetex

Zetex Semiconductors

BC859

SOT23PNPSILICONPLANARGENERALPURPOSETRANSISTORS

ETCList of Unclassifed Manufacturers

未分類制造商

BC859

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors ?Powerdissipation250mW ?PlasticcaseSOT-23 ?Weightapprox.0.01g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagin

Diotec

Diotec Semiconductor

BC859

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BC849andBC850. FEATURES ?Lowcurrent(max.100mA) ?Lowvoltage(max.45V). APPLICATIONS ?Lownoiseinputstagesofaudiofrequencyequipment.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BC859

EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,SWITCHING)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. ·ForComplementarywithNPNTypeBC849/850

KECKEC CORPORATION

KEC株式會(huì)社

BC859

SmallSignalTransistors(PNP)

FEATURES ◆PNPSiliconEpitaxialPlanarTransistorsforswitchingandAFamplifierapplications. ◆Especiallysuitedforautomaticinsertioninthick-andthin-filmcircuits. ◆ThesetransistorsaresubdividedintothreegroupsA,BandCaccordingtotheircurrentgain.ThetypeBC856isavail

GE

GE Industrial Company

BC859

PNPSiliconAFTransistors

PNPSiliconAFTransistors ?ForAFinputstagesanddriverapplications ?Highcurrentgain ?Lowcollector-emittersaturationvoltage ?Lownoisebetween30Hzand15kHz ?Complementarytypes:BC846,BC847,BC848,BC849,BC850(NPN)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BC859

PNPEpitaxialSiliconTransistor

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BC859

PNPGeneralPurposeTransistor

■Features ●Lowcurrent(max.100mA) ●Lowvoltage(max.45V). ●NPNcomplements:BC849andBC850.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

BC859

PNPSiliconEpitaxialPlanarTransistor

PNPSiliconEpitaxialPlanarTransistorforswitchingandAFamplifierapplications. ThetransistorissubdividedintothreegroupsA,BandC,accordingtoitsDCcurrentgain. AscomplementarytypetheNPNtransistorBC849isrecommended.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導(dǎo)體先之科半導(dǎo)體科技(東莞)有限公司

BC859

SOT-23SiliconPlanarEpitaxialTransistorsTRANSISTORS(PNP)

RECTRON

Rectron Semiconductor

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更多TF859供應(yīng)商 更新時(shí)間2025-1-17 13:00:00