TE28F256P30B85中文資料英特爾數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Introduction

This document provides information about the Intel StrataFlash? Embedded Memory (P30) device and describes its features, operation, and specifications.

Product Features

■ High performance

— 85/88 ns initial access

— 40 MHz with zero wait states, 20 ns clock-to data output synchronous-burst read mode

— 25 ns asynchronous-page read mode

— 4-, 8-, 16-, and continuous-word burst mode

— Buffered Enhanced Factory Programming (BEFP) at 5 μs/byte (Typ)

— 1.8 V buffered programming at 7 μs/byte (Typ)

■ Architecture

— Multi-Level Cell Technology: Highest Density at Lowest Cost

— Asymmetrically-blocked architecture

— Four 32-KByte parameter blocks: top or bottom configuration

— 128-KByte main blocks

■ Voltage and Power

—VCC(core) voltage: 1.7 V – 2.0 V

—VCCQ (I/O) voltage: 1.7 V – 3.6 V

— Standby current: 55 μA (Typ) for 256-Mbit

— 4-Word synchronous read current: 13 mA (Typ) at 40 MHz

■ Quality and Reliability

— Operating temperature: –40 °C to +85 °C

? 1-Gbit in SCSP is –30 °C to +85 °C

— Minimum 100,000 erase cycles per block

— ETOX? VIII process technology (130 nm)

■ Security

— One-Time Programmable Registers:

? 64 unique factory device identifier bits

? 64 user-programmable OTP bits

? Additional 2048 user-programmable OTP bits

— Selectable OTP Space in Main Array:

? 4x32KB parameter blocks + 3x128KB main blocks (top or bottom configuration)

— Absolute write protection: VPP= VSS

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

■ Software

— 20 μs (Typ) program suspend

— 20 μs (Typ) erase suspend

—Intel? Flash Data Integrator optimized

— Basic Command Set and Extended Command Set compatible

— Common Flash Interface capable

■ Density and Packaging

— 64/128/256-Mbit densities in 56-Lead TSOP package

— 64/128/256/512-Mbit densities in 64-Ball Intel?Easy BGA package

— 64/128/256/512-Mbit and 1-Gbit densities in Intel?QUAD+ SCSP

— 16-bit wide data bus