TDG100E90BEP

Marking：TDG90BE；Package：GaNPX；Bottom-side cooled, 100V E-mode GaN transistor Product Specification

Features ?100VenhancementmodeGaNpowerswitch?Bottom-sidecooledconfiguration?RDS(on)=7mΩ?IDS(max)=90A?Ultra-lowFOMIslandTechnology?die?LowinductanceGaNPX?package?Easygatedriverequirements(0Vto6V)?Transienttolerantgatedrive(-20V/+10V)?Veryhighswitchingfrequenc

TDG100E90BEPF

Marking：TDG90BF；Package：GaNPX；Bottom-side cooled, 100V E-mode GaN transistor Product Specification

Features ?100VenhancementmodeGaNpowerswitch?Bottom-sidecooledconfiguration?RDS(on)=7mΩ?IDS(max)=90A?Ultra-lowFOMIslandTechnology?die?LowinductanceGaNPX?package?Easygatedriverequirements(0Vto6V)?Transienttolerantgatedrive(-20V/+10V)?Veryhighswitchingfrequenc

TDG2003AP

7CH DARLINGTON SINK DRIVER

7CHDARLINGTONSINKDRIVER TheTD62001P/AP/F/AFSeriesarehigh?voltage,high?currentdarlingtondriverscomprisedofsevenNPNdarlingtonpairs. Allunitsfeatureintegralclampdiodesforswitchinginductiveloads. Applicationsincluderelay,hammer,lampanddisplay(LED)drivers. F

TDG650E60

Bottom- or Top-side Cooled 650 V E-mode GaN FET

Features ?650VenhancementmodepowerswitchwithP-GaN gatestructure ?Bottom-orTop-sidecooledconfiguration ?RDS(on)=25m?(typ) ?IDS(max)=60A ?Ultra-lowFOMIslandTechnology?die ?Ultra-lowinductanceGaNPX?package ?Easygatedriverequirements(0Vto6V)with7V to

TDG650E601TSP

Marking：61TSE；Package：GaNPX；Space GaN E-mode Transistor Product Specficaton

Features ?Classone/LeveloneProductionScreening ?LotAcceptanceTestoptionsavailable ?650Venhancementmodepowertransistor ?Top-cooled,lowinductanceGaNPX?package ?RDS(on)=25mΩ ?IDS(max)=60A ?Ultra-lowFOM ?Simplegatedriverequirements(0Vto6V) ?Transient

TDG650E601TSPF

Marking：61TSF；Package：GaNPX；Space GaN E-mode Transistor Product Specficaton

Features ?Classone/LeveloneProductionScreening ?LotAcceptanceTestoptionsavailable ?650Venhancementmodepowertransistor ?Top-cooled,lowinductanceGaNPX?package ?RDS(on)=25mΩ ?IDS(max)=60A ?Ultra-lowFOM ?Simplegatedriverequirements(0Vto6V) ?Transient

TDG650E602TSP

Marking：62TSE；Package：GaNPX；Space GaN E-mode Transistor Product Specficaton

Features ?Classone/LeveloneProductionScreening ?LotAcceptanceTestoptionsavailable ?650Venhancementmodepowertransistor ?Top-cooled,lowinductanceGaNPX?package ?RDS(on)=25mΩ ?IDS(max)=60A ?Ultra-lowFOM ?Simplegatedriverequirements(0Vto6V) ?Transient

TDG650E602TSPF

Marking：62TSF；Package：GaNPX；Space GaN E-mode Transistor Product Specficaton

Features ?Classone/LeveloneProductionScreening ?LotAcceptanceTestoptionsavailable ?650Venhancementmodepowertransistor ?Top-cooled,lowinductanceGaNPX?package ?RDS(on)=25mΩ ?IDS(max)=60A ?Ultra-lowFOM ?Simplegatedriverequirements(0Vto6V) ?Transient

TDGD271DEP

Marking：TDGD271DEP；Package：SOIC-8；Single/Dual 4-Amp Isolated Gate Driver with High Transient dV/dt) Immunity

KEYFEATURES ?Single,dual,orhigh-side/low-sidedrivers ?SinglePWMordualdigitalinputs ?HighdV/dtimmunity: ?200kV/μsCMTI ?400kV/μsLatch-up ?Separatepull-up/downoutputsforslew ratecontrol ?Widesupplyrange: ?Inputsupply:2.5–5.5V ?Driversupply:4.2–30V ?Ve

TDGD274DEP

Marking：TDGD274DEP；Package：SOIC-16；Single/Dual 4-Amp Isolated Gate Driver with High Transient dV/dt) Immunity

KEYFEATURES ?Single,dual,orhigh-side/low-sidedrivers ?SinglePWMordualdigitalinputs ?HighdV/dtimmunity: ?200kV/μsCMTI ?400kV/μsLatch-up ?Separatepull-up/downoutputsforslew ratecontrol ?Widesupplyrange: ?Inputsupply:2.5–5.5V ?Driversupply:4.2–30V ?Ve