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TCET111.G中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

TCET111.G
廠商型號(hào)

TCET111.G

功能描述

Optocoupler, Phototransistor Output, High Temperature, 110 °C, Rated

文件大小

147.65 Kbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡(jiǎn)稱

Vishay威世科技

中文名稱

威世科技半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-18 23:00:00

TCET111.G規(guī)格書(shū)詳情

DESCRIPTION

The TCET111., TCET111.G consists of a phototransistor

optically coupled to a gallium arsenide infrared-emitting

diode in a 4 pin plastic dual inline package.

FEATURES

? CTR offered in 9 groups

? Isolation materials according to UL 94 V-0

? Pollution degree 2

(DIN / VDE 0110 / resp. IEC 60664)

? Climatic classification 55 / 100 / 21

(IEC 60068 part 1)

? Special construction: therefore, extra low coupling

capacity of typical 0.2 pF, high common mode rejection

? Low temperature coefficient of CTR

? Temperature range -40 °C to +110 °C

? Rated impulse voltage (transient overvoltage)

VIOTM = 6 kVpeak

? Isolation test voltage (partial discharge test voltage)

Vpd = 1.6 kV

? Rated isolation voltage (RMS includes DC)

VIOWM = 600 VRMS

? Rated recurring peak voltage (repetitive) VIORM = 850 Vpeak

? Creepage current resistance according to VDE 0303/

IEC 60112 comparative tracking index: CTI ? 175

? Thickness through insulation ? 4 mm

? External creepage distance > 8 mm

? Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

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