首頁 >TC6006F>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SCR FEATURES =HIGHSURGECAPABILITY ?HIGHON-STATECURRENT ?HIGHSTABILITYANDRELIABILITY DESCRIPTION TheTL1006--->TL8006FamilyofSiliconCon- trolledRectifiersusesahighperformanceglass passivatedtechnology. ThisgeneralpurposeFamilyofSiliconControlled Rectifiersis | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-Channel30V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?LowOn-Resistance ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?DC/DCConverters,HighSpeedSwitching | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
N-Ch60VFastSwitchingMOSFETsAdvancedhighcelldensityTrenchtechnology | UNITPOWER Unitpower Technology Limited | UNITPOWER | ||
N-Ch60VFastSwitchingMOSFETs | UNITPOWER Unitpower Technology Limited | UNITPOWER | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
N-Ch60VFastSwitchingMOSFETs | XINDEYI ShenZhen XinDeYi Electronics Co., Ltd. | XINDEYI | ||
PINDIODE DESCRIPTION TheseseriesofPINdiodesaredesignedforapplicationsrequiringsmallpackagesizeandmoderateaveragepowerhandlingcapability.ThelowcapacitanceoftheUM6000andUM6600allowsthemtobeusedasseriesswitchingelementsto1GHz.ThelowresistanceoftheUM6200isuseful | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
N-Ch60VFastSwitchingMOSFETs | XINDEYI ShenZhen XinDeYi Electronics Co., Ltd. | XINDEYI | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER |
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