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TC55

LOW DROPOUT POSITIVE VOLTAGE REGULATOR

GENERALDESCRIPTION TheTC55SeriesisacollectionofCMOSlowdropoutpositivevoltageregulatorswhichcansourceupto250mAofcurrentwithanextremelylowinput-outputvoltagedifferentialof380mV. FEATURES ■VeryLowDropoutVoltage....120mVtypat100mA

TELCOM

TelCom Semiconductor, Inc

TC55

1關(guān)A LOW DROPOUT POSITIVE VOLTAGE REGULATOR

GENERALDESCRIPTION TheTC55SeriesisafamilyofCMOSlowdropoutpositivevoltageregulatorswhichcansourceupto250mAofcurrent.Theextremelylowoperatingcurrent(1.1μAtypical)makesthisparttheidealchoiceforbatteryoperatedapplicationsandeliminatestheneedforanaddition

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

TC55

Axial Leaded Aluminum Electrolytic Capacitors

85oC,HighRipple,GeneralPurposeCapacitor TypeTCisanaxialleaded,85oC,1000hourlonglifegeneralpurposealuminumelectrolyticcapacitorwithahighripplecurrentratingandissuitableforconsumerelectronicequipmentapplications. Highlights ?Generalpurpose ?Highripplecurr

CDE

Cornell Dubilier Electronics

TC55

包裝:散裝 封裝/外殼:軸向,CAN 類別:電容器 鋁電解電容器 描述:CAP ALUM 20UF 250V AXIAL

CDE

Cornell Dubilier Electronics

TC5501D

256 WORD x 4 BIT CMOS RAM

DESCRIPTION TheTC5501P/Disafullystaticreadwritememory organizedas256wordsby4bitsusingCMOStech- nology.Becauseofultralowpowerdissipation,the TC5501P/Dcanbeusedasbatteryoperatedportable memorysystemandalsoasanonvolatilememory withbatterybackup.TheTC

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC5501D-1

256 WORD x 4 BIT CMOS RAM

DESCRIPTION TheTC5501P/Disafullystaticreadwritememory organizedas256wordsby4bitsusingCMOStech- nology.Becauseofultralowpowerdissipation,the TC5501P/Dcanbeusedasbatteryoperatedportable memorysystemandalsoasanonvolatilememory withbatterybackup.TheTC

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC5501P

256 WORD x 4 BIT CMOS RAM

DESCRIPTION TheTC5501P/Disafullystaticreadwritememory organizedas256wordsby4bitsusingCMOStech- nology.Becauseofultralowpowerdissipation,the TC5501P/Dcanbeusedasbatteryoperatedportable memorysystemandalsoasanonvolatilememory withbatterybackup.TheTC

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC5501P-1

256 WORD x 4 BIT CMOS RAM

DESCRIPTION TheTC5501P/Disafullystaticreadwritememory organizedas256wordsby4bitsusingCMOStech- nology.Becauseofultralowpowerdissipation,the TC5501P/Dcanbeusedasbatteryoperatedportable memorysystemandalsoasanonvolatilememory withbatterybackup.TheTC

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001AFI

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001AFI

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001AFI-10

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001AFI-10L

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001AFI-85

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001AFI-85L

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001AFL

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001AFL

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001AFL-10

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001AFL-10L

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001AFL-10LT

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001AFL-10LV

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    TC55

  • 制造商:

    Cornell Dubilier Electronics (CDE)

  • 類別:

    電容器 > 鋁電解電容器

  • 系列:

    TC

  • 包裝:

    散裝

  • 容差:

    -10%,+50%

  • ESR(等效串聯(lián)電阻):

    6.13 歐姆 @ 120Hz

  • 不同溫度時(shí)使用壽命:

    85°C 時(shí)為 1000 小時(shí)

  • 工作溫度:

    -40°C ~ 85°C

  • 極化:

    極化

  • 應(yīng)用:

    通用

  • 大小 / 尺寸:

    0.750" 直徑 x 1.125" 長(zhǎng)(19.05mm x 28.58mm)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    軸向,

  • 描述:

    CAP ALUM 20UF 250V AXIAL

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Cornell-Dubilier
5
全新原裝 貨期兩周
詢價(jià)
Cornell-Dubilier
2022+
1
全新原裝 貨期兩周
詢價(jià)
TOSHIBA/東芝
23+
SOJ32
20000
原裝正品 歡迎咨詢
詢價(jià)
TOSHIBA
21+
TSSOP
500
原裝現(xiàn)貨。假一賠十
詢價(jià)
東芝 | Toshiba
21+
SOP
4550
全新原裝現(xiàn)貨
詢價(jià)
TOSHIBA/東芝
9905+
SOP32
3253
原裝現(xiàn)貨
詢價(jià)
TOSHIBA
2020+
TSOP
450
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
詢價(jià)
21+
DIP
12588
全新原裝深圳現(xiàn)貨
詢價(jià)
TOSHIBA
2023+
TSSOP48
5800
進(jìn)口原裝,現(xiàn)貨熱賣
詢價(jià)
N/A
500
詢價(jià)
更多TC55供應(yīng)商 更新時(shí)間2024-12-25 16:06:00