TC511001AP中文資料東芝數(shù)據(jù)手冊(cè)PDF規(guī)格書

DESCRIPTION

The TC511001AP/AJ/AZ is the new generation dynamic RAM organized 1,048,576 words by

1 bit. The TC511001AP/AJ/AZ utilizes TOSHIBA's CMOS Silicon gate process technology as

well as advanced circuit techniques to provide wide operating margins, both internally

and to the system user. Multiplexed address inputs permit the TC511001AP/AJ/AZ to be

packaged in a standard 18 pin plastic DIP, 26/20 pin plastic SOJ and 20/19 pin plastic

ZIP. The package size provides high system bit densities and is compatible with widely

available automated testing and insertion equipment. System oriented features include

single power supply of 5V±10 tolerance, direct interfacing capability with high perform-

ance logic families such as Schottky TTL. The special feature of TC511001AP/AJ/AZ is

nibble mode, allowing the user to serially access 4 bits of data at a high data rate.

FEATURES

1,048,576 word by 1 bit organization

Fast access time and cycle time.

FRAC RAS Access Time

CAA

Column Address

Access Time

CAS Access Time

Cycle Time

Nibble Mode

ENCAC Access Time

CAC

ERC

Nibble Mode

*NC Cycle Time

FO$11001AB/AJ/A-73-80/-10

70ns 80ns 100ns

35ns

40ns 50ns

20ns 20ns 25ns

130ns 150ns 180ns

20ns 20ns 20ns

40ns

40ns 40ns

Single power supply of 5V±10 with a

built-in VBB generator

Low Power:

440mW MAX. Operating (TC511001AP/AJ/AZ-70)

385mW MAX. Operating (TC511001AP/AJ/AZ-80)

330ml MAX. Operating (TC511001AP/AJ/AZ-10)

5.5mW MAX. Standby

Output unlatched at cycle end allows two-

dimensional chip selection

Common I/O capability using EARLY WRITE

operation

Read-Modify-Write,

CAS before RAS refresh,

RAS-only refresh, Hidden refresh, Nibble

Mode and Test Mode capability

All inputs and output TTL compatible

512 refresh cycles/8ms

Package

Plastic DIP: TC511001AP

Plastic SOJ: TC511001AJ

Plastic ZIP: TC511001AZ