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MDE1932

SingleN-channelTrenchMOSFET80V,120A,3.4m(ohm)

MGCHIP

MagnaChip Semiconductor.

MDE1932RH

SingleN-channelTrenchMOSFET80V,120A,3.4m(ohm)

MGCHIP

MagnaChip Semiconductor.

MDE1932RH

MDE1932RH美格納原廠原裝PDF資料

ETCList of Unclassifed Manufacturers

未分類制造商

PDF上傳者：深圳德田科技有限公司

MDE1932TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=120A@TC=25℃ ·DrainSourceVoltage :VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.4mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MDP1932

SingleN-channelTrenchMOSFET80V,120A,3.4m(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP1932TH

SingleN-channelTrenchMOSFET80V,120A,3.4m(ohm)

MGCHIP

MagnaChip Semiconductor.

MSK1932

ULTRAHIGHSPEED/VOLTAGEVIDEOAMPLIFIER

DESCRIPTION: TheMSK1932SeriesofHighSpeed,HighVoltageVideoAmplifiersisdesignedtodirectlydrivethecathodeoftoday’shighperformanceCRT’s.TheMSK1932hasuseradjustablecontrastandbrightnesslevelsandalsocomeswithablankingfunction.TheMSK1932canbedirectlyconnecte

MSK

M.S. Kennedy Corporation

NTE1932

IntegratedCircuit3-TerminalPositiveVoltageRegulator,10V,1A

TheNTE1932fixed–voltageregulatorisamonolithicintegratedcircuitinaTO220typepackagedesignedforuseinawidevarietyofapplicationsincludinglocal,on–cardregulation.Thisregulatoremploysinternalcurrentlimiting,thermalshutdown,andsafe–areacompensation.Withadequateheat

NTE

NTE Electronics

PAC1932

Single/Multi-ChannelDCPower/EnergyMonitorwithAccumulator

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

PAC1932T-I/JQ

Single/Multi-ChannelDCPower/EnergyMonitorwithAccumulator

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

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TST
21+
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6000
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TST
23+
35375
華南總代
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TST
三年內
1983
只做原裝正品
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TST
23+
SMD
56000
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24+
N/A
74000
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23+
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25000
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu)
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TST
1000
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2447
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315000
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2021+
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5484
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23+
SMD
11200
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更多TA1932A供應商 更新時間2025-3-31 8:00:00

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