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HLDD6P10

P-ChannelEnhancementModePowerMOSFET

HUILIDAShenzhen hui lida electronic co., LTD

匯利達(dá)廣東匯利達(dá)半導(dǎo)體有限公司

HLDD6P10

P-ChannelEnhancementModePowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MTD6P10

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=-6A@TC=25℃ ·DrainSourceVoltage- :VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.66Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTD6P10E

TMOSPOWERFET6.0AMPERES100VOLTSRDS(on)=0.66OHM

TMOSE-FETPowerFieldEffectTransistorDPAKforSurfaceMount P–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecovery

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD6P10E

P??hannelDPAKPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD6P10EG

P??hannelDPAKPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

RFM6P10

PCHANNELENHANCEMENTMODEPOWERFIELDEFFECTTRANSISTORS

[GESOLIDSTATE]

ETCList of Unclassifed Manufacturers

未分類制造商

RFP6P10

-6A,-80Vand-100V,0.600Ohm,P-ChannelPowerMOSFETs

TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforhighspeedapplicationssuchasswitchingregulators,switchingconvertors,relaydrivers,anddriversforhighpowerbipolarswitchingtransistors. FormerlydevelopmentaltypeTA09046. Features

Intersil

Intersil Corporation

RFP6P10

PCHANNELENHANCEMENTMODEPOWERFIELDEFFECTTRANSISTORS

[GESOLIDSTATE]

ETCList of Unclassifed Manufacturers

未分類制造商

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3000
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24+
N/A
56000
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Cornell
22+
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75
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7671
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TOSHOBIR 0645供應(yīng)0.68元
8500
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11200
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SMD6P,3.4x4mm
7350
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