零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
T4S60 | N-Channel 650V (D-S) Power MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | |
Materialspecification | FERROXCUBEFERROXCUBE INC. 飛利浦飛利浦元件公司 | FERROXCUBE | ||
600V4AaMOSTMPowerTransistor GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
N-Channel650V(D-S)PowerMOSFET FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=4A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max) ?100avalanchetested ?MinimumLot-to-Lot | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
600V4AaMOSPowerTransistor GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
600V4AaMOSTMPowerTransistor GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
N-Channel650V(D-S)PowerMOSFET FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
600V4AaMOSPowerTransistor | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=4A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max) ?100avalanchetested ?MinimumLot-to-Lot | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
600V4AaMOSPowerTransistor | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
600V4AaMOSTMPowerTransistor GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=4A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max) ?100avalanchetested ?MinimumLot-to-Lot | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
600V4AaMOSTMPowerTransistor GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
N-Channel650V(D-S)PowerMOSFET FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
600V4AaMOSTMPowerTransistor GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
600V4AaMOSPowerTransistor GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
600V4AaMOSPowerTransistor | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
TELEDYNE |
24+ |
SMA |
1 |
詢價 | |||
ZV |
23+ |
SOP-4 |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | ||
Mini-Circuits |
638 |
原裝正品 |
詢價 | ||||
PHI |
QFP32 |
01+ |
2 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 | ||
PHI |
17+ |
QFP32 |
9988 |
只做原裝進口,自己庫存 |
詢價 | ||
PHI |
23+ |
QFP32 |
20000 |
全新原裝假一賠十 |
詢價 | ||
OTTO |
22+ |
Na |
1208 |
航宇科工半導體-中國航天科工集團戰(zhàn)略合作伙伴! |
詢價 | ||
ELATEC RFID Systems |
23+ |
TO-18 |
12800 |
原裝正品代理商最優(yōu)惠價格,現(xiàn)貨或訂貨 |
詢價 | ||
Kyocera AVX |
23+ |
1505 |
7350 |
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術(shù)支持!!! |
詢價 | ||
JXND |
23+ |
SOD-323 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 |
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